Peng Lintao, Chan Henry, Choo Priscilla, Odom Teri W, Sankaranarayanan Subramanian K R S, Ma Xuedan
Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States.
Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States.
Nano Lett. 2020 Aug 12;20(8):5866-5872. doi: 10.1021/acs.nanolett.0c01789. Epub 2020 Jul 16.
Due to their tunable bandgaps and strong spin-valley locking, transition metal dichalcogenides constitute a unique platform for hosting single-photon emitters. Here, we present a versatile approach for creating bright single-photon emitters in WSe monolayers by the deposition of gold nanostars. Our molecular dynamics simulations reveal that the formation of the quantum emitters is likely caused by the highly localized strain fields created by the sharp tips of the gold nanostars. The surface plasmon modes supported by the gold nanostars can change the local electromagnetic fields in the vicinity of the quantum emitters, leading to their enhanced emission intensities. Moreover, by correlating the emission energies and intensities of the quantum emitters, we are able to associate them with two types of strain fields and derive the existence of a low-lying dark state in their electronic structures. Our findings are highly relevant for the development and understanding of single-photon emitters in transition metal dichalcogenide materials.
由于其可调节的带隙和强大的自旋-谷锁定特性,过渡金属二硫属化物构成了一个承载单光子发射器的独特平台。在此,我们展示了一种通过沉积金纳米星在WSe单分子层中创建明亮单光子发射器的通用方法。我们的分子动力学模拟表明,量子发射器的形成可能是由金纳米星尖锐尖端产生的高度局部化应变场引起的。金纳米星支持的表面等离子体模式可以改变量子发射器附近的局部电磁场,从而导致其发射强度增强。此外,通过关联量子发射器的发射能量和强度,我们能够将它们与两种类型的应变场联系起来,并推断出其电子结构中存在一个低能暗态。我们的发现对于过渡金属二硫属化物材料中单光子发射器的开发和理解具有高度相关性。