Yan Jiabin, Fang Li, Yan Yiqun, Sun Zhihang, Shi Fan, Shi Zheng, Wang Yongjin
Opt Lett. 2024 Jun 1;49(11):3038-3041. doi: 10.1364/OL.525315.
The gallium nitride (GaN) integrated optical transceiver chip based on multiple quantum wells (MQW) structure exhibits great promise in the fields of communication and sensing. In this Letter, the effect of ambient temperature on the performance of GaN-integrated optical transceiver chips including a blue MQW light-emitting diode (LED) and a MQW photodiode (PD) is comprehensively studied. Temperature-dependent light-emitting and current-voltage characteristics of the blue MQW LEDs are measured with the ambient temperature ranging from -70°C to 120°C. The experimental results reveal a decline in the electroluminescent (EL) intensity and an obvious redshift in the emission peak wavelength of the LED with increasing ambient temperature. The light detection performance of MQW PD under different temperatures is also measured with the illumination of an external blue MQW LED, indicating an enhancement in the PD sensitivity as the temperature rises. Finally, the temperature effect on the MQW PD under the illumination of the MQW LED on the GaN-integrated optical transceiver chip is characterized, and the PD photocurrent increases with higher ambient temperature. Furthermore, the measured temperature characteristics indicate that the GaN-integrated optical transceiver chip offers a promising application potential for optoelectronic temperature sensor.
基于多量子阱（MQW）结构的氮化镓（GaN）集成光收发芯片在通信和传感领域展现出巨大潜力。在本信函中，全面研究了环境温度对包括蓝色MQW发光二极管（LED）和MQW光电二极管（PD）的GaN集成光收发芯片性能的影响。在环境温度从-70°C到120°C范围内，测量了蓝色MQW LED的温度相关发光特性和电流-电压特性。实验结果表明，随着环境温度升高，LED的电致发光（EL）强度下降，发射峰值波长出现明显红移。在外部蓝色MQW LED照射下，还测量了不同温度下MQW PD的光探测性能，结果表明随着温度升高，PD灵敏度增强。最后，表征了GaN集成光收发芯片上MQW LED照射下温度对MQW PD的影响，随着环境温度升高，PD光电流增大。此外，测量的温度特性表明，GaN集成光收发芯片在光电温度传感器方面具有广阔的应用潜力。
