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在银纳米颗粒覆盖的石墨烯/ n型硅中观察到石墨烯增强的横向光伏效应。

Graphene-enhanced lateral photovoltaic effect observed in the Ag nanoparticle-covered graphene/n-type silicon.

作者信息

Liu Shuai, Ren Feiyu, Dong Xinyuan, Zheng Diyuan, Niu Yiru, Jiao Lu, Tu Weiwei, Gan Zhikai, Wang Hui

出版信息

Opt Lett. 2024 Jun 1;49(11):3126-3129. doi: 10.1364/OL.524723.

DOI:10.1364/OL.524723
PMID:38824344
Abstract

Graphene is a kind of two-dimensional material with a single-layer carbon structure and has been investigated in many high-performance photodetectors. The lateral photovoltaic effect (LPE) is widely used in the position-sensitive detectors (PSDs) owing to its linear response of photovoltage to the light position. In this Letter, a type of graphene-enhanced LPE is observed in the Ag nanoparticle-covered graphene/n-type Si. The LPE sensitivity can reach 97.3 mV/mm, much higher than the sensitivity of 1.3 mV/mm in the control sample of Ag/Si and 5.2 mV/mm of graphene/Si. Based on the photocarriers' diffusion mechanism, tailoring a photocarrier transfer at the interface of a heterojunction plays a key role for the enhancement. These findings exhibit great application potential of graphene in the field of PSDs and offer an effective method for the optimization of LPE devices.

摘要

石墨烯是一种具有单层碳结构的二维材料,已在许多高性能光电探测器中得到研究。横向光伏效应(LPE)因其光电压对光位置的线性响应而被广泛应用于位置敏感探测器(PSD)中。在本信函中,在银纳米颗粒覆盖的石墨烯/n型硅中观察到了一种石墨烯增强的LPE。LPE灵敏度可达97.3 mV/mm,远高于Ag/Si对照样品的1.3 mV/mm和石墨烯/Si的5.2 mV/mm的灵敏度。基于光载流子的扩散机制,在异质结界面处调整光载流子转移对增强效应起着关键作用。这些发现展示了石墨烯在PSD领域的巨大应用潜力,并为优化LPE器件提供了一种有效方法。

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