Yan Qing, Li Hailong, Jiang Hua, Sun Qing-Feng, Xie X C
International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China.
Interdisciplinary Center for Theoretical Physics and Information Sciences (ICTPIS), Fudan University, Shanghai 200433, China.
Sci Adv. 2024 Jun 7;10(23):eado4756. doi: 10.1126/sciadv.ado4756. Epub 2024 Jun 5.
Topological systems hosting gapless boundary states have attracted huge attention as promising components for next-generation information processing, attributed to their capacity for dissipationless electronics. Nevertheless, recent theoretical and experimental inquiries have revealed the emergence of energy dissipation in precisely quantized electrical transport. Here, we present a criterion for the realization of truly no-dissipation design, characterized as = + , where , , and represent the number of modes participating in injecting, tunneling, and backscattering processes, respectively. The key lies in matching the number of injecting, tunneling, and backscattering modes, ensuring the equilibrium among all engaged modes inside the device. Among all the topological materials, we advocate for the indispensability of Chern insulators exhibiting higher Chern numbers to achieve functional devices and uphold the no-dissipation rule simultaneously. Furthermore, we design the topological current divider and collector, evading dissipation upon fulfilling the established criterion. Our work paves the path for developing the prospective topotronics.
承载无隙边界态的拓扑系统因其具备无耗散电子学的能力，作为下一代信息处理的有前景组件而备受关注。然而，最近的理论和实验研究揭示了在精确量化的电输运中能量耗散的出现。在此，我们提出了实现真正无耗散设计的一个准则，其特征为 = + ，其中 、 和 分别表示参与注入、隧穿和背散射过程的模式数量。关键在于匹配注入、隧穿和背散射模式的数量，确保器件内部所有参与模式之间的平衡。在所有拓扑材料中，我们主张具有更高陈数的陈绝缘体对于实现功能器件并同时维持无耗散规则是不可或缺的。此外，我们设计了拓扑分流器和收集器，在满足既定准则时避免耗散。我们的工作为发展未来的拓扑电子学铺平了道路。
