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使用拉曼图谱分析硫酸处理聚(3,4-亚乙基二氧噻吩):聚苯乙烯磺酸盐薄膜中增强的微观结构均匀性。

Enhanced Microstructural Uniformity in Sulfuric-Acid-Treated Poly(3,4-Ethylenedioxythiophene):Poly(Styrene Sulfonate) Films Using Raman Map Analysis.

机构信息

BB21 Plus Program, Department of Chemistry, Pukyong National University, Busan, 48513, Republic of Korea.

Department of Polymer Engineering, Pukyong National University, Busan, 48513, Republic of Korea.

出版信息

Macromol Rapid Commun. 2024 Sep;45(18):e2400299. doi: 10.1002/marc.202400299. Epub 2024 Jun 18.

DOI:10.1002/marc.202400299
PMID:38850109
Abstract

Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) films have emerged as potential alternatives to indium-tin oxide as transparent electrodes in optoelectronic devices because of their superior transparency, flexibility, and chemical doping stability. However, pristine PEDOT:PSS films show low conductivities because the insulating PSS-rich domains isolate the conductive PEDOT-rich domains. In this study, the conductivities and corresponding spatially resolved Raman properties of PEDOT:PSS thin films treated with various concentrations of HSO are presented. After the PEDOT:PSS films are treated with the HSO solutions, their electrical conductivities are significantly improved from 0.5 (nontreated) to 4358 S cm (100% v/v). Raman heat maps of the peak shifts and widths of the C═C stretching mode are constructed. A blueshift and width decrease of the C═C Raman mode in PEDOT are uniformly observed in the entire measurement area (20 × 20 µm), indicating that microstructural transitions are successfully accomplished across the area from the coiled to linear conformation and high crystallinity upon HSO treatment. Thus, it is proved that comprehensive Raman map analysis can be easily utilized to clarify microstructural properties distributed in large areas induced by various dopants. These results also offer valuable insights for evaluating and optimizing the performance of other conductive thin films.

摘要

聚(3,4-亚乙基二氧噻吩):聚(苯乙烯磺酸盐)(PEDOT:PSS)薄膜因其优异的透明度、柔韧性和化学掺杂稳定性,已成为光电设备中替代铟锡氧化物的潜在透明电极材料。然而,原始的 PEDOT:PSS 薄膜由于绝缘的 PSS 丰富区隔离了导电的 PEDOT 丰富区,因此表现出较低的电导率。在这项研究中,展示了经过不同浓度 HSO 处理的 PEDOT:PSS 薄膜的电导率和相应的空间分辨拉曼性质。在 PEDOT:PSS 薄膜经过 HSO 溶液处理后,其电导率从 0.5(未处理)显著提高到 4358 S cm(100% v/v)。构建了 C═C 伸缩模式峰位移和宽度的 Raman 热图。在整个测量区域(20×20 µm)中,PEDOT 的 C═C Raman 模式均匀观察到蓝移和宽度减小,表明在 HSO 处理后,从螺旋构象到线性构象和高结晶度的微观结构转变在整个区域内成功完成。因此,证明了全面的 Raman 图谱分析可以很容易地用于阐明由各种掺杂剂引起的大面积分布的微观结构性质。这些结果还为评估和优化其他导电薄膜的性能提供了有价值的见解。

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