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单层半导体中非线性光子晶体极化激元的静电控制

Electrostatic Control of Nonlinear Photonic-Crystal Polaritons in a Monolayer Semiconductor.

作者信息

Khestanova Ekaterina, Shahnazaryan Vanik, Kozin Valerii K, Kondratyev Valeriy I, Krizhanovskii Dmitry N, Skolnick Maurice S, Shelykh Ivan A, Iorsh Ivan V, Kravtsov Vasily

机构信息

School of Physics and Engineering, ITMO University, Saint Petersburg 197101, Russia.

Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland.

出版信息

Nano Lett. 2024 Jun 10. doi: 10.1021/acs.nanolett.4c01475.

DOI:10.1021/acs.nanolett.4c01475
PMID:38855978
Abstract

Integration of 2D semiconductors with photonic crystal slabs provides an attractive approach to achieving strong light-matter coupling and exciton-polariton formation in a chip-compatible geometry. However, for the development of practical devices, it is crucial that polariton excitations are easily tunable and exhibit a strong nonlinear response. Here we study neutral and charged exciton-polaritons in an electrostatically gated photonic crystal slab with an embedded monolayer semiconductor MoSe and experimentally demonstrate a novel approach to optical control based on polariton nonlinearity. We show that spatial modulation of the dielectric environment within the photonic crystal unit cell results in the formation of two distinct excitonic species with significantly different nonlinear responses of the corresponding charged exciton-polaritons under optical pumping. This behavior enables optical switching with ultrashort laser pulses and can be sensitively controlled via an electrostatic gate voltage. Our results open new avenues toward the development of active polaritonic devices in a compact chip-compatible implementation.

摘要

将二维半导体与光子晶体平板集成,为在芯片兼容的几何结构中实现强光-物质耦合和激子极化激元的形成提供了一种有吸引力的方法。然而,对于实际器件的开发而言,至关重要的是极化激元激发易于调谐且表现出强烈的非线性响应。在此,我们研究了嵌入单层半导体二硒化钼(MoSe₂)的静电门控光子晶体平板中的中性和带电激子极化激元,并通过实验证明了一种基于极化激元非线性的光学控制新方法。我们表明,光子晶体晶胞内介电环境的空间调制导致形成两种不同的激子种类,在光泵浦下相应的带电激子极化激元具有显著不同的非线性响应。这种行为使得能够用超短激光脉冲进行光开关,并且可以通过静电栅极电压进行灵敏控制。我们的结果为在紧凑的芯片兼容实现中开发有源极化激元器件开辟了新途径。

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