Zhang Guojuan, Guo Siyang, Zhang Tao, Wang Qing, Zhang Zicai, Liu Jihong, Wang Shufang, Qiao Shuang
Opt Express. 2024 May 6;32(10):17058-17071. doi: 10.1364/OE.522027.
The demand for a high-performance position sensitive detector (PSD), a novel type of photoelectric sensor, is increasing due to advancements in digitization and automation technology. Cadmium sulfide (CdS), a non-centrosymmetric material, holds significant potential in photoelectric devices. However, the pyroelectric effect of CdS in PSDs and its influence on lateral photoresponse are still unknown. In this work, we fabricated an ITO/CdS/Si heterojunction using chemical bath deposition (CBD) and investigated the pyro-phototronic effect under nonuniform illumination. The theory of electron-hole pairs' generation, separation, and carrier diffusion was carefully considered to understand the underlying mechanisms. Our experimental findings revealed that the device exhibited an exceptionally high position sensitivity (PS) of 1061.3 mV/mm, surpassing the generally observed PS of 655.1 mV/mm induced by single photovoltaic effect by 160.5%. Meanwhile, the PSD demonstrated rapid response times of 0.01 and 0.04 ms, respectively. Moreover, the influence of ambient temperature and electrode distance on the pyro-phototronic effect was well analyzed. Notably, the PSD exhibited remarkable stability even at ambient temperatures up to 150 °C. Despite the considerable working distance of 11 mm, the PS of the PSD remained at 128.99 mV/mm. These findings provide valuable theoretical and experimental foundations for optimizing the design and implementation of high-performance large working distance PSDs.
随着数字化和自动化技术的进步，对高性能位置敏感探测器（PSD）这种新型光电传感器的需求日益增加。硫化镉（CdS）作为一种非中心对称材料，在光电器件中具有巨大潜力。然而，CdS在PSD中的热释电效应及其对横向光响应的影响仍不清楚。在这项工作中，我们采用化学浴沉积（CBD）法制备了ITO/CdS/Si异质结，并研究了非均匀光照下的热光电子效应。为了理解其潜在机制，我们仔细考虑了电子 - 空穴对的产生、分离和载流子扩散理论。我们的实验结果表明，该器件表现出高达1061.3 mV/mm的异常高的位置灵敏度（PS），比单光伏效应通常观察到的655.1 mV/mm的PS高出160.5%。同时，PSD的响应时间分别为0.01和0.04 ms，响应迅速。此外，还深入分析了环境温度和电极距离对热光电子效应的影响。值得注意的是，即使在高达150°C的环境温度下，PSD仍表现出显著的稳定性。尽管工作距离长达11 mm，PSD的PS仍保持在128.99 mV/mm。这些发现为优化高性能大工作距离PSD的设计和实现提供了有价值的理论和实验基础。
