Hu Bing, Liu Yunjie, Zhang Bo, Guo Fuhai, Zhang Mingcong, Yu Weizhuo, Li Siqi, Hao Lanzhong
School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, P. R. China.
College of Science, China University of Petroleum, Qingdao, Shandong, 266580, P. R. China.
Nanoscale. 2024 Feb 22;16(8):4170-4175. doi: 10.1039/d3nr05906e.
Position-sensitive detectors (PSDs) based on the lateral photovoltaic effect are crucial components in non-contact distance measurement, process control, guidance systems, and other related applications. However, PSDs are challenging due to the narrow spectral range and low sensitivity, limiting further practical application. Here, we present an ultra-sensitive SnSe/Si PSD device. A large-area uniform SnSe nanorod (NR) array film was grown on Si using a glancing-angle magnetron sputtering deposition technique and a SnSe/Si heterojunction PSD device was fabricated. PSDs exhibit an excellent photoresponse in a wide spectral range of 405-980 nm, showing an ultrahigh position sensitivity of 1517.4 mV mm and an excellent spectral sensitivity of 4 × 10 V W. More importantly, the detection limit power of the device is as low as 10 nW, indicating the outstanding potential for weak light detection. Based on the unique structural features and interface effect, the mechanisms for the remarkable performance of the fabricated SnSe/Si PSD device are clarified. This work indicates the large potential of SnSe/Si heterojunctions as a promising material for ultrasensitive optical position-sensitive devices.
基于横向光伏效应的位置敏感探测器（PSD）是非接触距离测量、过程控制、制导系统及其他相关应用中的关键部件。然而，由于光谱范围窄和灵敏度低，PSD具有挑战性，限制了其进一步的实际应用。在此，我们展示了一种超灵敏的SnSe/Si PSD器件。利用掠角磁控溅射沉积技术在Si上生长了大面积均匀的SnSe纳米棒（NR）阵列薄膜，并制备了SnSe/Si异质结PSD器件。PSD在405 - 980 nm的宽光谱范围内表现出优异的光响应，具有1517.4 mV/mm的超高位置灵敏度和4×10 V/W的优异光谱灵敏度。更重要的是，该器件的探测极限功率低至10 nW，表明其在弱光检测方面具有出色的潜力。基于独特的结构特征和界面效应，阐明了所制备的SnSe/Si PSD器件卓越性能的机制。这项工作表明SnSe/Si异质结作为超灵敏光学位置敏感器件的一种有前途的材料具有巨大潜力。
