Design and simulation of a high performance AgCuS jalpaite-based photodetector.

This work provides a comprehensive investigation by using simulations and performance analysis of a high performance and narrowband AgCuS photodetector (PD) that operates in the near-infrared (NIR) region and is built using WS and BaSi semiconductors. Across its operational wavelength range, a comprehensive assessment of the device's electrical and optical properties such as photocurrent, open-circuit voltage, quantum efficiency, responsivity and detectivity is methodically carried out. Furthermore, a thorough investigation has been conducted into the impact of many parameters, including width, carrier density and defects of various layers. Also, the intricate interactions between WS/AgCuS and AgCuS/BaSi interface properties of the photodetector are explored. The AgCuS-based PD remarkably produces the best outcomes with an open-circuit voltage of 0.74 V, current of 43.79 mA/cm, responsivity of 0.79 AW and detectivity of 4.73 × 10 Jones and over 90 % QE in the NIR range for the AgCuS PD. The results showcase this jalpaite material as a promising one in the field of PD.