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基于硫铜银矿的高性能光电探测器的设计与仿真

Design and simulation of a high performance AgCuS jalpaite-based photodetector.

作者信息

Shiddique Sheikh Noman, Ebon Md Islahur Rahman, Pappu Md Alamin Hossain, Islam Md Choyon, Hossain Jaker

机构信息

Solar Energy Laboratory, Department of Electrical and Electronic Engineering, University of Rajshahi, Rajshahi, 6205, Bangladesh.

出版信息

Heliyon. 2024 May 31;10(11):e32247. doi: 10.1016/j.heliyon.2024.e32247. eCollection 2024 Jun 15.

DOI:10.1016/j.heliyon.2024.e32247
PMID:38868022
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11168443/
Abstract

This work provides a comprehensive investigation by using simulations and performance analysis of a high performance and narrowband AgCuS photodetector (PD) that operates in the near-infrared (NIR) region and is built using WS and BaSi semiconductors. Across its operational wavelength range, a comprehensive assessment of the device's electrical and optical properties such as photocurrent, open-circuit voltage, quantum efficiency, responsivity and detectivity is methodically carried out. Furthermore, a thorough investigation has been conducted into the impact of many parameters, including width, carrier density and defects of various layers. Also, the intricate interactions between WS/AgCuS and AgCuS/BaSi interface properties of the photodetector are explored. The AgCuS-based PD remarkably produces the best outcomes with an open-circuit voltage of 0.74 V, current of 43.79 mA/cm, responsivity of 0.79 AW and detectivity of 4.73 × 10 Jones and over 90 % QE in the NIR range for the AgCuS PD. The results showcase this jalpaite material as a promising one in the field of PD.

摘要

这项工作通过对一种高性能窄带AgCuS光电探测器（PD）进行模拟和性能分析，展开了全面研究。该探测器在近红外（NIR）区域工作，采用WS和BaSi半导体构建而成。在其整个工作波长范围内，系统地对该器件的电学和光学特性，如光电流、开路电压、量子效率、响应度和探测率等进行了全面评估。此外，还深入研究了包括各层宽度、载流子密度和缺陷等诸多参数的影响。同时，还探究了光电探测器的WS/AgCuS和AgCuS/BaSi界面特性之间的复杂相互作用。基于AgCuS的光电探测器在NIR范围内表现出色，开路电压为0.74 V，电流为43.79 mA/cm，响应度为0.79 AW，探测率为4.73×10 Jones，量子效率超过90%。结果表明，这种硫铜银矿材料在光电探测器领域颇具前景。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9d5f/11168443/78853034d1c8/gr12.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9d5f/11168443/86ec1bd91af4/gr1.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9d5f/11168443/2d2969b729d9/gr3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9d5f/11168443/eea1093024e7/gr4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9d5f/11168443/fa68dbe5051c/gr5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9d5f/11168443/5d781494b216/gr6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9d5f/11168443/a1ee106f9e8d/gr7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9d5f/11168443/edbd176995af/gr8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9d5f/11168443/df8cc05e176b/gr9.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9d5f/11168443/9b74fa7bfa7d/gr10.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9d5f/11168443/7c4c5a623600/gr11.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9d5f/11168443/78853034d1c8/gr12.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9d5f/11168443/86ec1bd91af4/gr1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9d5f/11168443/50c40f9d630b/gr2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9d5f/11168443/2d2969b729d9/gr3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9d5f/11168443/eea1093024e7/gr4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9d5f/11168443/fa68dbe5051c/gr5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9d5f/11168443/5d781494b216/gr6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9d5f/11168443/a1ee106f9e8d/gr7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9d5f/11168443/edbd176995af/gr8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9d5f/11168443/df8cc05e176b/gr9.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9d5f/11168443/9b74fa7bfa7d/gr10.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9d5f/11168443/7c4c5a623600/gr11.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9d5f/11168443/78853034d1c8/gr12.jpg

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3
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4
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Light Sci Appl. 2021 Jun 9;10(1):123. doi: 10.1038/s41377-021-00551-4.
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Heliyon. 2021 Mar 1;7(3):e06379. doi: 10.1016/j.heliyon.2021.e06379. eCollection 2021 Mar.
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