Islam Md Choyon, Mondal Bipanko Kumar, Pappu Md Alamin Hossain, Hossain Jaker
Solar Energy Laboratory, Department of Electrical and Electronic Engineering, University of Rajshahi, Rajshahi, 6205, Bangladesh.
Department of Electrical and Electronic Engineering, Begum Rokeya University, Rangpur, Rangpur, 5400, Bangladesh.
Heliyon. 2024 Aug 23;10(17):e36821. doi: 10.1016/j.heliyon.2024.e36821. eCollection 2024 Sep 15.
Copper cadmium tin selenide (CuCdSnSe) based photodetector (PD) has been explored with the solar cell capacitance simulator (SCAPS-1D). Herein, cadmium sulfide (CdS) and molybdenum disulfide (MoS) are used as a window and back surface field (BSF) layers, respectively. The physical attributes, such as width, carrier density and bulk defects have been adjusted to attain the optimal conditions. In an optimized environment, the performance parameters of the CuCdSnSe (CCTSe) PD e.g. open circuit voltage (V), short circuit current (J), responsivity, and detectivity are determined as 0.76 V, 45.57 mA/cm, 0.72 A/W and 5.05 × 10 Jones, respectively without a BSF layer. After insertion of the BSF layer, the performance of the CCTSe PD is significantly upgraded because of the production of high built-in potential which rises the magnitude of V from 0.76 V to 0.84 V. For this reason, the responsivity and detectivity of CCTSe PD are also grows with the value of 0.84 A/W and 2.32 × 10 Jones, respectively that indicate its future potential.
基于铜镉锡硒（CuCdSnSe）的光电探测器（PD）已通过太阳能电池电容模拟器（SCAPS - 1D）进行了研究。在此，硫化镉（CdS）和二硫化钼（MoS）分别用作窗口层和背表面场（BSF）层。对诸如宽度、载流子密度和体缺陷等物理属性进行了调整以达到最佳条件。在优化环境下，无BSF层时，CuCdSnSe（CCTSe）光电探测器的性能参数，如开路电压（V）、短路电流（J）、响应度和探测率分别确定为0.76 V、45.57 mA/cm²、0.72 A/W和5.05×10¹² Jones。插入BSF层后，由于产生了高内建电势，CCTSe光电探测器的性能显著提升，这使得V的大小从0.76 V增加到0.84 V。因此，CCTSe光电探测器的响应度和探测率也分别增长到0.84 A/W和2.32×10¹² Jones，这表明了其未来的潜力。
