Mondal Bipanko Kumar, Mostaque Shaikh Khaled, Hossain Jaker
Solar Energy Laboratory, Department of Electrical and Electronic Engineering, University of Rajshahi, Rajshahi, 6205, Bangladesh.
Heliyon. 2022 Mar 16;8(3):e09120. doi: 10.1016/j.heliyon.2022.e09120. eCollection 2022 Mar.
Here, we manifest the design and simulation of an -ZnSe/-SbSe/ -AgInTe dual-heterojunction (DH) solar cell which exhibits a prominent efficiency. The performance of the solar cell has been assessed with reported experimental parameters using SCAPS-1D simulator by varying thickness, doping concentration and defect density in each layer. The proposed structure shows an efficiency of 38.6% with = 0.860 V, = 54.3 mA/cm and FF = 82.77%, respectively. Such a high efficiency close to Shockley-Queisser (SQ) limit of DH solar cell has been achieved as a result of the longer wavelength photon absorption in the -AgInTe back surface field (BSF) layer through a tail-states assisted (TSA) two-step photon upconversion phenomenon. These results indicate hopeful application of AgInTe as a bottom layer in SbSe-based solar cell to enhance the cell performance in future.
在此，我们展示了一种具有显著效率的 -ZnSe/-SbSe/ -AgInTe 双异质结（DH）太阳能电池的设计与模拟。通过使用 SCAPS-1D 模拟器，通过改变各层的厚度、掺杂浓度和缺陷密度，利用已报道的实验参数对太阳能电池的性能进行了评估。所提出的结构分别显示出效率为 38.6%，开路电压 = 0.860 V，短路电流密度 = 54.3 mA/cm² 以及填充因子 FF = 82.77%。由于在 -AgInTe 背表面场（BSF）层中通过尾态辅助（TSA）两步光子上转换现象实现了更长波长光子吸收，从而实现了如此接近 DH 太阳能电池的肖克利 - 奎塞尔（SQ）极限的高效率。这些结果表明 AgInTe 在基于 SbSe 的太阳能电池中作为底层以提高未来电池性能方面具有有望的应用前景。
