Jia Qingling, Wang Qi, Meng Lingshuai, Zhao Yujie, Xu Jing, Sun Meng, Li Zijian, Li Han, Chen Huiyu, Zhang Yongxing
Anhui Province Key Laboratory of Pollutant Sensitive Materials and Environmental Remediation, Anhui Province Key Laboratory of Intelligent Computing and Applications, Anhui Province Industrial Generic Technology Research Center for Alumics Materials, Huaibei Normal University, Huaibei 235000, China.
School of Materials Science and Engineering, North University of China, Taiyuan 030051, China.
Nanomaterials (Basel). 2024 Jun 2;14(11):968. doi: 10.3390/nano14110968.
Molybdenum disulfide (MoS), a typical layered material, has important applications in various fields, such as optoelectronics, catalysis, electronic devices, sensors, and supercapacitors. Extensive research has been carried out on few-layered MoS in the field of electrochemistry due to its large specific surface area, abundant active sites and short electron transport path. However, the preparation of few-layered MoS is a significant challenge. This work presents a simple one-pot hydrothermal method for synthesizing few-layered MoS. Furthermore, it investigates the exfoliation effect of different amounts of sodium borohydride (NaBH) as a stripping agent on the layer number of MoS. Na ions, as alkali metal ions, can intercalate between layers to achieve the purpose of exfoliating MoS. Additionally, NaBH exhibits reducibility, which can effectively promote the formation of the metallic phase of MoS. Few-layered MoS, as an electrode for supercapacitor, possesses a wide potential window of 0.9 V, and a high specific capacitance of 150 F g at 1 A g. This work provides a facile method to prepare few-layered two-dimensional materials for high electrochemical performance.
二硫化钼（MoS）是一种典型的层状材料，在光电子学、催化、电子器件、传感器和超级电容器等各个领域都有重要应用。由于其大的比表面积、丰富的活性位点和短的电子传输路径，在电化学领域对少层MoS进行了广泛研究。然而，制备少层MoS是一项重大挑战。这项工作提出了一种简单的一锅水热法来合成少层MoS。此外，研究了不同量的硼氢化钠（NaBH）作为剥离剂对MoS层数的剥离效果。Na离子作为碱金属离子，可以插入层间以实现剥离MoS的目的。此外，NaBH具有还原性，可有效促进MoS金属相的形成。少层MoS作为超级电容器的电极，具有0.9 V的宽电位窗口，在1 A g时具有150 F g的高比电容。这项工作提供了一种简便的方法来制备具有高电化学性能的少层二维材料。
