Jin Geyu, Zeng Yicheng, Liu Xiao, Wang Qingya, Wei Jing, Liu Fangze, Li Hongbo
Beijing Key Laboratory of Construction-Tailorable Advanced Functional Materials and Green Applications, Experimental Center of Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China.
Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology, Zhuhai 519088, China.
Nanomaterials (Basel). 2024 Jun 6;14(11):989. doi: 10.3390/nano14110989.
Semiconductor nanorods (NRs) have great potential in optoelectronic devices for their unique linearly polarized luminescence which can break the external quantum efficiency limit of light-emitting diodes (LEDs) based on spherical quantum dots. Significant progress has been made for developing red, green, and blue light-emitting NRs. However, the synthesis of NRs emitting in the deep red region, which can be used for accurate red LED displays and promoting plant growth, is currently less explored. Here, we report the synthesis of deep red CdSeTe/CdZnS/ZnS dot-in-rod core/shell NRs via a seeded growth method, where the doping of Te in the CdSe core can extend the NR emission to the deep red region. The rod-shaped CdZnS shell is grown over CdSeTe seeds. By growing a ZnS passivation shell, the CdSeTe/CdZnS/ZnS NRs exhibit a photoluminescence emission peak at 670 nm, a full width at a half maximum of 61 nm and a photoluminescence quantum yield of 45%. The development of deep red NRs can greatly extend the applications of anisotropic nanocrystals.
半导体纳米棒(NRs)因其独特的线性偏振发光而在光电器件中具有巨大潜力,这种发光可以突破基于球形量子点的发光二极管(LED)的外部量子效率限制。在开发红色、绿色和蓝色发光纳米棒方面已经取得了重大进展。然而,目前对于可用于精确红色LED显示和促进植物生长的深红色区域发光纳米棒的合成研究较少。在此,我们报告了通过种子生长法合成深红色CdSeTe/CdZnS/ZnS核壳型点棒纳米棒,其中在CdSe核中掺杂Te可将纳米棒的发射扩展到深红色区域。棒状CdZnS壳层生长在CdSeTe种子上。通过生长ZnS钝化壳层,CdSeTe/CdZnS/ZnS纳米棒在670nm处呈现光致发光发射峰,半高宽为61nm,光致发光量子产率为45%。深红色纳米棒的开发可以极大地扩展各向异性纳米晶体的应用。