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通过核/冠/双壳异质结构的复杂设计实现的深红色发射胶体量子阱发光二极管。

Deep-Red-Emitting Colloidal Quantum Well Light-Emitting Diodes Enabled through a Complex Design of Core/Crown/Double Shell Heterostructure.

作者信息

Shabani Farzan, Dehghanpour Baruj Hamed, Yurdakul Iklim, Delikanli Savas, Gheshlaghi Negar, Isik Furkan, Liu Baiquan, Altintas Yemliha, Canımkurbey Betül, Demir Hilmi Volkan

机构信息

Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey.

Luminous! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.

出版信息

Small. 2022 Feb;18(8):e2106115. doi: 10.1002/smll.202106115. Epub 2021 Dec 10.

Abstract

Extending the emission peak wavelength of quasi-2D colloidal quantum wells has been an important quest to fully exploit the potential of these materials, which has not been possible due to the complications arising from the partial dissolution and recrystallization during growth to date. Here, the synthetic pathway of (CdSe/CdS)@(1-4 CdS/CdZnS) (core/crown)@(colloidal atomic layer deposition shell/hot injection shell) hetero-nanoplatelets (NPLs) using multiple techniques, which together enable highly efficient emission beyond 700 nm in the deep-red region, is proposed and demonstrated. Given the challenges of using conventional hot injection procedure, a method that allows to obtain sufficiently thick and passivated NPLs as the seeds is developed. Consequently, through the final hot injection shell coating, thick NPLs with superior optical properties including a high photoluminescence quantum yield of 88% are achieved. These NPLs emitting at 701 nm exhibit a full-width-at-half-maximum of 26 nm, enabled by the successfully maintained quasi-2D shape and minimum defects of the resulting heterostructure. The deep-red light-emitting diode (LED) device fabricated with these NPLs has shown to yield a high external quantum efficiency of 6.8% at 701 nm, which is on par with other types of LEDs in this spectral range.

摘要

扩展准二维胶体量子阱的发射峰波长一直是充分挖掘这些材料潜力的重要追求,然而由于迄今为止生长过程中部分溶解和再结晶所带来的复杂性,这一目标尚未实现。在此,我们提出并展示了一种使用多种技术合成(CdSe/CdS)@(1 - 4 CdS/CdZnS)(核/壳)@(胶体原子层沉积壳/热注入壳)异质纳米片(NPLs)的途径,该方法能够在深红色区域实现超过700 nm的高效发射。鉴于使用传统热注入方法存在的挑战,我们开发了一种能够获得足够厚且经过钝化处理的NPLs作为种子的方法。因此,通过最后的热注入壳层包覆,获得了具有优异光学性质的厚NPLs,其光致发光量子产率高达88%。这些在701 nm处发射的NPLs半高宽为26 nm,这得益于成功保持的准二维形状以及所得异质结构中的最小缺陷。用这些NPLs制造的深红色发光二极管(LED)器件在701 nm处显示出6.8%的高外部量子效率,与该光谱范围内的其他类型LED相当。

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