Liu Zhenwu, Liu Suping, Wang Cuiluan, Zhao Fang, Xing Wang, Xiong Cong, Zhu Lingni, Ma Xiaoyu
Opt Lett. 2024 Jun 15;49(12):3448-3451. doi: 10.1364/OL.524601.
High-power semiconductor lasers with stabilized wavelengths are recognized as exemplary pumping sources for solid-state lasers. This study introduces distributed feedback (DFB) laser diode arrays designed to maintain an extensive temperature locking range. We report experimentally on high-power 808 nm DFB laser diode arrays. The first-order sinusoidal grating was fabricated using nanoimprint lithography, succeeded by inductively coupled plasma (ICP) dry etching and subsequent wet polishing. These 808 nm DFB laser diode arrays have demonstrated a measured output power of 134 W under a pulsed current of 150 A, with the heat sink temperature maintained at 25°C. The slope efficiency was determined to be 1.1 W/A. At a current of 150 A, the laser operated with a narrow spectral width over a wide temperature range, extending from -30 to 90°C, with a temperature drift coefficient of 0.0595 nm/K.
波长稳定的高功率半导体激光器被公认为是固态激光器的理想泵浦源。本研究介绍了旨在保持广泛温度锁定范围的分布反馈（DFB）激光二极管阵列。我们报告了高功率808 nm DFB激光二极管阵列的实验情况。一阶正弦光栅采用纳米压印光刻技术制造，随后进行电感耦合等离子体（ICP）干法蚀刻和后续湿法抛光。这些808 nm DFB激光二极管阵列在150 A的脉冲电流下，散热片温度保持在25°C时，测得的输出功率为134 W。斜率效率确定为1.1 W/A。在150 A的电流下，激光器在-30至90°C的宽温度范围内以窄光谱宽度运行，温度漂移系数为0.0595 nm/K。
