Zhang Zhiwei, Cai Weiwei, Hong Rongdun, Lin Dingqu, Chen Xiaping, Cai Jiafa, Wu Zhengyun
Department of Physics, Xiamen University, Xiamen, 361005, People's Republic of China.
Jiujiang Research Institute of Xiamen University, Jiujiang, 332000, People's Republic of China.
Nanoscale Res Lett. 2018 Jul 6;13(1):197. doi: 10.1186/s11671-018-2606-2.
We developed a Joule heating decomposition (JHD) method, which applied direct current on the SiC for the epitaxial growth of multi-layer graphene (MLG) films on Si-terminated (0001) face of the high doping 4H-SiC substrate. By this JHD method, the growth time for preparing MLG was only several minutes. Raman spectroscopy was employed to study the influence of the temperature caused by the Joule heating on the quality and the uniformity of the sample. Then, other properties, such as the strain, the layer's number, and the electric characteristics, of the MLG were studied in details. It was found that the quality of the MLG was substantially dependent on the growth temperature (operation current) and the growth time, while the layer's number was only dependent on the growth temperature but not the growth time. Finally, less-defect and homogeneous MLG (~ 45 layers) with an area of ~ 12 × 5 mm could be obtained at a heating temperature of ~ 1470 °C with duration time of 5 min. By using the linear transmission line method, the specific contact resistance of Au and MLG was 5.03 × 10 Ω cm, and the sheet resistance was 52.36 Ω/sq, respectively.
我们开发了一种焦耳热分解（JHD）方法，该方法通过在高掺杂4H-SiC衬底的Si端（0001）面上施加直流电，在SiC上外延生长多层石墨烯（MLG）薄膜。通过这种JHD方法，制备MLG的生长时间仅为几分钟。采用拉曼光谱研究焦耳热引起的温度对样品质量和均匀性的影响。然后，详细研究了MLG的其他性质，如应变、层数和电学特性。结果发现，MLG的质量主要取决于生长温度（操作电流）和生长时间，而层数仅取决于生长温度，与生长时间无关。最后，在加热温度约为1470℃、持续时间为5分钟的条件下，可以获得面积约为12×5mm、缺陷较少且均匀的MLG（约45层）。通过线性传输线法，Au与MLG的比接触电阻分别为5.03×10Ω·cm，薄层电阻为52.36Ω/sq。
