铁电极化切换过程中单晶掺锰铋铁氧体薄膜中的中间多畴态

Intermediate multidomain state in single-crystalline Mn-doped BiFeO thin films during ferroelectric polarization switching.

作者信息

Nakashima Seiji, Kimura Koji, Happo Naohisa, Ang Artoni Kevin R, Yamamoto Yuta, Sekhar Halubai, Osaka Ai I, Hayashi Koichi, Fujisawa Hironori

机构信息

Department of Electronics and Computer Science, Graduate School of Engineering, University of Hyogo, Himeji, Hyogo, 671-2201, Japan.

Department of Physical Science and Engineering, Nagoya Institute of Technology, Nagoya, 466-8555, Japan.

出版信息

Sci Rep. 2024 Jun 21;14(1):14358. doi: 10.1038/s41598-024-65215-w.

DOI:10.1038/s41598-024-65215-w

PMID:38906976

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11192801/

Abstract

A intermediate multidomain state and large crystallographic tilting of 1.78° for the (hh0) planes of a (001)-oriented single-domain Mn-doped BiFeO (BFMO) thin film were found when an electric field was applied along the [110] direction. The anomalous crystallographic tilting was caused by ferroelastic domain switching of the 109° domain switching. In addition, ferroelastic domain switching occurred via an intermediate multidomain state. To investigate these switching dynamics under an electric field, we used in situ fluorescent X-ray induced Kossel line pattern measurements with synchrotron radiation. In addition, in situ inverse X-ray fluorescence holography (XFH) experiments revealed that atomic displacement occurred under an applied electric field. We attributed the atomic displacement to crystallographic tilting induced by a converse piezoelectric effect. Our findings provide important insights for the design of piezoelectric and ferroelectric materials and devices.

摘要

当沿[110]方向施加电场时，发现(001)取向的单畴掺锰铋铁氧体（BFMO）薄膜的(hh0)面存在中间多畴态和1.78°的大晶体学倾斜。这种反常的晶体学倾斜是由109°畴切换的铁弹性畴切换引起的。此外，铁弹性畴切换通过中间多畴态发生。为了研究电场作用下的这些切换动力学，我们使用了同步辐射原位荧光X射线诱导的科塞尔线图案测量。此外，原位逆X射线荧光全息术（XFH）实验表明，在施加电场时发生了原子位移。我们将原子位移归因于逆压电效应引起的晶体学倾斜。我们的发现为压电和铁电材料及器件的设计提供了重要见解。