Ho Yu-Che, Ye Gaihua, Nnokwe Cynthia, Kuryatkov Vladimir, Warzywoda Juliusz, Grave de Peralta Luis, He Rui, Bernussi Ayrton
Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409, United States.
Nano Tech Center, Texas Tech University, Lubbock, Texas 79409, United States.
ACS Omega. 2024 Jun 21;9(26):27963-27968. doi: 10.1021/acsomega.3c10280. eCollection 2024 Jul 2.
β-Crystalline phase gallium oxide (β-GaO) is an ultrawide bandgap material with prospective applications in electronics and deep ultraviolet (DUV) optoelectronics and optics. The monoclinic crystal structure of β-GaO results in optical anisotropy to incident light with different polarization states. This attribute can lead to different optical applications in the DUV. In this article, we investigated the optical properties of β-GaO thin films grown by pulsed laser deposition technique on sapphire substrates with different crystallographic orientations. Marked in-plane polarization anisotropy, determined by reflectance and Raman spectroscopy, was observed for β-GaO films deposited on an -cut sapphire substrate. In contrast, isotropic optical properties were observed in β-GaO films deposited on a -cut sapphire substrate.
β-晶相氧化镓(β-GaO)是一种超宽带隙材料,在电子学、深紫外(DUV)光电子学和光学领域具有潜在应用。β-GaO的单斜晶体结构导致其对不同偏振态的入射光具有光学各向异性。这一特性可在深紫外领域带来不同的光学应用。在本文中,我们研究了通过脉冲激光沉积技术在具有不同晶体取向的蓝宝石衬底上生长的β-GaO薄膜的光学性质。对于沉积在切割蓝宝石衬底上的β-GaO薄膜,通过反射率和拉曼光谱确定观察到了明显的面内偏振各向异性。相比之下,在切割蓝宝石衬底上沉积的β-GaO薄膜中观察到了各向同性光学性质。