Alauwaji Ruba Mohammad, Dakhlaoui Hassen, Algraphy Eman, Ungan Fatih, Wong Bryan M
Physics Department, College of Science, Qassim University, Qassim 51452, Saudi Arabia.
Physics Department, College of Science of Dammam, Imam Abdulrahman Bin Faisal University, Dammam 34212, Saudi Arabia.
Molecules. 2024 Jun 27;29(13):3052. doi: 10.3390/molecules29133052.
We examine the optical and electronic properties of a GaAs spherical quantum dot with a hydrogenic impurity in its center. We study two different confining potentials: (1) a modified Gaussian potential and (2) a power-exponential potential. Using the finite difference method, we solve the radial Schrodinger equation for the 1s and 1p energy levels and their probability densities and subsequently compute the optical absorption coefficient (OAC) for each confining potential using Fermi's golden rule. We discuss the role of different physical quantities influencing the behavior of the OAC, such as the structural parameters of each potential, the dipole matrix elements, and their energy separation. Our results show that modification of the structural physical parameters of each potential can enable new optoelectronic devices that can leverage inter-sub-band optical transitions.
我们研究了中心含有类氢杂质的 GaAs 球形量子点的光学和电子性质。我们研究了两种不同的限制势：（1）修正高斯势和（2）幂指数势。使用有限差分法，我们求解了 1s 和 1p 能级的径向薛定谔方程及其概率密度，随后使用费米黄金定则计算了每种限制势的光吸收系数（OAC）。我们讨论了影响 OAC 行为的不同物理量的作用，例如每种势的结构参数、偶极矩矩阵元和它们的能量间隔。我们的结果表明，每种势的结构物理参数的改变能够实现利用子带间光跃迁的新型光电器件。
