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用于低光成像的64×128三维堆叠式单光子雪崩二极管图像传感器

A 64 × 128 3D-Stacked SPAD Image Sensor for Low-Light Imaging.

作者信息

Wang Zhe, Yang Xu, Tian Na, Liu Min, Cai Ziteng, Feng Peng, Dou Runjiang, Yu Shuangming, Wu Nanjian, Liu Jian, Liu Liyuan

机构信息

State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.

College of Materials Science and Opto-Electronics Technology, University of Chinese Academy of Sciences, Beijing 100049, China.

出版信息

Sensors (Basel). 2024 Jul 5;24(13):4358. doi: 10.3390/s24134358.

Abstract

Low-light imaging capabilities are in urgent demand in many fields, such as security surveillance, night-time autonomous driving, wilderness rescue, and environmental monitoring. The excellent performance of SPAD devices gives them significant potential for applications in low-light imaging. This article presents a 64 (rows) × 128 (columns) SPAD image sensor designed for low-light imaging. The chip utilizes a three-dimensional stacking architecture and microlens technology, combined with compact gated pixel circuits designed with thick-gate MOS transistors, which further enhance the SPAD's photosensitivity. The configurable digital control circuit allows for the adjustment of exposure time, enabling the sensor to adapt to different lighting conditions. The chip exhibits very low dark noise levels, with an average DCR of 41.5 cps at 2.4 V excess bias voltage. Additionally, it employs a denoising algorithm specifically developed for the SPAD image sensor, achieving two-dimensional grayscale imaging under 6 × 10 lux illumination conditions, demonstrating excellent low-light imaging capabilities. The chip designed in this paper fully leverages the performance advantages of SPAD image sensors and holds promise for applications in various fields requiring low-light imaging capabilities.

摘要

在许多领域,如安全监控、夜间自动驾驶、野外救援和环境监测等,对低光成像能力有着迫切需求。单光子雪崩二极管(SPAD)器件的卓越性能使其在低光成像应用中具有巨大潜力。本文介绍了一款专为低光成像设计的64(行)×128(列)SPAD图像传感器。该芯片采用三维堆叠架构和微透镜技术,并结合了采用厚栅MOS晶体管设计的紧凑型门控像素电路,进一步提高了SPAD的光敏性。可配置的数字控制电路允许调整曝光时间,使传感器能够适应不同的光照条件。该芯片具有非常低的暗噪声水平,在2.4 V过偏置电压下平均暗计数率(DCR)为41.5 cps。此外,它采用了专门为SPAD图像传感器开发的去噪算法,在6×10勒克斯光照条件下实现二维灰度成像,展现出优异的低光成像能力。本文设计的芯片充分利用了SPAD图像传感器的性能优势,在需要低光成像能力的各个领域具有应用前景。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5791/11244227/53d011f1dc70/sensors-24-04358-g001.jpg

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