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二硫化钼作为电场传感器的研究以及层厚对灵敏度的影响。

Study of MoS as an Electric Field Sensor and the Role of Layer Thickness on the Sensitivity.

作者信息

Islam Mohammad Razzakul, Hu Jiali, Kareekunnan Afsal, Kuki Akihiro, Kudo Takeshi, Maruyama Takeshi, Nishizaki Atsushi, Tokita Yuki, Akabori Masashi, Mizuta Hiroshi

机构信息

School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi 923-1292, Japan.

OTOWA ELECTRIC CO., LTD., 5-6-20, Shioe Amagasaki 661-0976, Hyogo, Japan.

出版信息

ACS Omega. 2024 Jun 25;9(27):29751-29755. doi: 10.1021/acsomega.4c03350. eCollection 2024 Jul 9.

DOI:10.1021/acsomega.4c03350
PMID:39005837
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11238282/
Abstract

In this study, we investigate the scope of molybdenum disulfide (MoS) as an electric field sensor. We show that MoS sensors can be used to identify the polarity as well as to detect the magnitude of the electric field. The response of the sensor is recorded as the change in the drain current when the electric field is applied. The sensitivity, defined as the percentage change in the drain current, reveals that it has a linear relation with the magnitude of the electric field. Furthermore, the sensitivity is highly dependent on the layer thickness, with the single-layer device being highly sensitive and the sensitivity decreasing with the thickness. We have also compared the electric field sensitivity of MoS devices to that of previously studied graphene devices and found the former to be exceptionally sensitive than the latter for a given electric field magnitude.

摘要

在本研究中,我们探究了二硫化钼(MoS)作为电场传感器的适用范围。我们表明,MoS传感器可用于识别电场的极性以及检测电场强度。当施加电场时,传感器的响应记录为漏极电流的变化。灵敏度定义为漏极电流的百分比变化,结果表明它与电场强度呈线性关系。此外,灵敏度高度依赖于层厚度,单层器件高度敏感,且灵敏度随厚度增加而降低。我们还将MoS器件的电场灵敏度与先前研究的石墨烯器件进行了比较,发现在给定电场强度下,前者比后者异常敏感。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d98a/11238282/fc3c3cb915df/ao4c03350_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d98a/11238282/1e66c53505fb/ao4c03350_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d98a/11238282/9afffc0bbada/ao4c03350_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d98a/11238282/4d8cf3acf522/ao4c03350_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d98a/11238282/fc3c3cb915df/ao4c03350_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d98a/11238282/1e66c53505fb/ao4c03350_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d98a/11238282/9afffc0bbada/ao4c03350_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d98a/11238282/4d8cf3acf522/ao4c03350_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d98a/11238282/fc3c3cb915df/ao4c03350_0004.jpg

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本文引用的文献

1
Revisiting the Mechanism of Electric Field Sensing in Graphene Devices.重新审视石墨烯器件中电场传感的机制。
ACS Omega. 2021 Dec 3;6(49):34086-34091. doi: 10.1021/acsomega.1c05530. eCollection 2021 Dec 14.
2
Tunable Mobility in Double-Gated MoTe Field-Effect Transistor: Effect of Coulomb Screening and Trap Sites.双栅 MoTe 场效应晶体管中的可调谐迁移率:库仑屏蔽和陷阱位的影响。
ACS Appl Mater Interfaces. 2017 Aug 30;9(34):29185-29192. doi: 10.1021/acsami.7b05865. Epub 2017 Aug 18.
3
Work Function Tuning in Two-Dimensional MoS Field-Effect-Transistors with Graphene and Titanium Source-Drain Contacts.
二维 MoS 场效应晶体管中石墨烯和钛源漏接触的功函数调谐。
Sci Rep. 2017 Mar 30;7:45546. doi: 10.1038/srep45546.
4
Influence of post-annealing on the off current of MoS2 field-effect transistors.退火后处理对二硫化钼场效应晶体管关态电流的影响。
Nanoscale Res Lett. 2015 Feb 11;10:62. doi: 10.1186/s11671-015-0773-y. eCollection 2015.
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Thickness scaling effect on interfacial barrier and electrical contact to two-dimensional MoS2 layers.二维 MoS2 层界面势垒和电接触的厚度缩放效应。
ACS Nano. 2014 Dec 23;8(12):12836-42. doi: 10.1021/nn506138y. Epub 2014 Dec 5.
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Nat Nanotechnol. 2014 Oct;9(10):744-5. doi: 10.1038/nnano.2014.224.
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Nano Lett. 2013 Aug 14;13(8):3546-52. doi: 10.1021/nl4010783. Epub 2013 Jul 22.
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Where does the current flow in two-dimensional layered systems?在二维层状系统中,电流流向何处?
Nano Lett. 2013 Jul 10;13(7):3396-402. doi: 10.1021/nl401831u. Epub 2013 Jun 28.
9
Strong light-matter interactions in heterostructures of atomically thin films.原子层薄膜异质结构中的强光物质相互作用。
Science. 2013 Jun 14;340(6138):1311-4. doi: 10.1126/science.1235547. Epub 2013 May 2.
10
High performance multilayer MoS2 transistors with scandium contacts.具有钪接触的高性能多层 MoS2 晶体管。
Nano Lett. 2013 Jan 9;13(1):100-5. doi: 10.1021/nl303583v. Epub 2012 Dec 19.