Song Qiyang, Zhang Youwei, Chen Qiao, Wu Su, Yan Xin, He Kai, Gao Guilong, Chen Qiao, Wang Shun
MOE Key Laboratory of Fundamental Physical Quantities Measurement & Hubei Key Laboratory of Gravitation and Quantum Physics, PGMF and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.
Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen 518057, China.
ACS Appl Mater Interfaces. 2024 Jul 24;16(29):38355-38364. doi: 10.1021/acsami.4c04521. Epub 2024 Jul 16.
Chemical vapor deposition (CVD) is a widely used method for graphene synthesis, but it struggles to produce large-area uniform bilayer graphene (BLG). This study introduces a novel approach to meet the demands of large-scale integrated circuit applications, challenging the conventional reliance on uniform BLG over extensive areas. We developed a unique method involving the direct growth of bilayer graphene arrays (BLGA) on Cu foil substrates using patterned titanium (Ti) as a diffusion barrier. The use of the Ti layer can effectively control carbon atom diffusion through the Cu foil without altering the growth conditions or compromising the graphene quality, thereby showcasing its versatility. The approach allows for targeted BLG growth and achieved a yield of 100% for a 10 × 10 BLG units array. Then a 10 × 10 BLG memristor array was fabricated, and a yield of 96% was achieved. The performances of these devices show good uniformity, evidenced by the set voltages concentrated around 4 V, and a high resistance state (HRS) to low resistance state (LRS) ratio predominantly around 10, reflecting the spatial uniformity of the prepared BLGA. This study provides insight into the BLG growth mechanism and opens new possibilities for BLG-based electronics.
化学气相沉积（CVD）是一种广泛用于石墨烯合成的方法，但它难以制备大面积均匀的双层石墨烯（BLG）。本研究引入了一种新颖的方法来满足大规模集成电路应用的需求，挑战了在大面积上对均匀BLG的传统依赖。我们开发了一种独特的方法，涉及使用图案化的钛（Ti）作为扩散阻挡层，在铜箔基板上直接生长双层石墨烯阵列（BLGA）。Ti层的使用可以有效地控制碳原子通过铜箔的扩散，而不会改变生长条件或损害石墨烯质量，从而展示了其多功能性。该方法允许有针对性地生长BLG，并实现了10×10 BLG单元阵列100%的产率。然后制造了一个10×10 BLG忆阻器阵列，产率达到96%。这些器件的性能显示出良好的均匀性，设定电压集中在4V左右，高电阻状态（HRS）与低电阻状态（LRS）的比率主要在10左右，这反映了所制备的BLGA的空间均匀性。本研究深入了解了BLG的生长机制，并为基于BLG的电子学开辟了新的可能性。
