Shi Hao, Yang Siyu, Wang Huipu, Ding Dupeng, Hu Yang, Qu Hengze, Chen Chuyao, Hu Xuemin, Zhang Shengli
MIIT Key Laboratory of Advanced Display Materials and Devices, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
School of Material Engineering, Jinling Institute of Technology, Nanjing 211169, China.
ACS Appl Mater Interfaces. 2024 Jul 31;16(30):39592-39599. doi: 10.1021/acsami.4c06320. Epub 2024 Jul 16.
Two-dimensional materials have been extensively studied in field-effect transistors (FETs). However, the performance of p-type FETs has lagged behind that of n-type, which limits the development of complementary logical circuits. Here, we investigate the electronic properties and transport performance of anisotropic monolayer GaSCl for p-type FETs through first-principles calculations. The anisotropic electronic properties of monolayer GaSCl result in excellent device performance. The p-type GaSCl FETs with 10 nm channel length have an on-state current of 2351 μA/μm for high-performance (HP) devices along the direction and an on-state current of 992 μA/μm with an on/off ratio exceeding 10 for low-power (LP) applications along the direction. In addition, the delay-time (τ) and power dissipation product of GaSCl FETs can fully meet the International Technology Roadmap for Semiconductors standards for HP and LP applications. Our work illustrates that monolayer GaSCl is a competitive p-type channel for next-generation devices.
二维材料在场效应晶体管（FET）中已得到广泛研究。然而，p型FET的性能落后于n型FET，这限制了互补逻辑电路的发展。在此，我们通过第一性原理计算研究了用于p型FET的各向异性单层GaSCl的电子性质和输运性能。单层GaSCl的各向异性电子性质导致了优异的器件性能。对于具有10 nm沟道长度的p型GaSCl FET，沿 方向的高性能（HP）器件的导通电流为2351 μA/μm，沿 方向的低功耗（LP）应用的导通电流为992 μA/μm，开/关比超过10。此外，GaSCl FET的延迟时间（τ）和功耗积完全符合用于HP和LP应用的国际半导体技术路线图标准。我们的工作表明，单层GaSCl是下一代器件具有竞争力的p型沟道材料。
