Yang Siyu, Shi Hao, Hu Yang, Si Jingwen, Chen Chuyao, Yang Jialin, Qu Hengze, Hu Xuemin, Zhang Fengjun, Zhang Shengli
School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China.
School of Material Engineering, Jinling Institute of Technology, Nanjing, Jiangsu 211169, People's Republic of China.
J Phys Chem Lett. 2024 May 30;15(21):5721-5727. doi: 10.1021/acs.jpclett.4c01129. Epub 2024 May 21.
Exploring two-dimensional (2D) materials with a small carrier effective mass and suitable band gap is crucial for the design of metal oxide semiconductor field effect transistors (MOSFETs). Here, the quantum transport properties of stable 2D SbSeBr are simulated on the basis of first-principles calculations. Monolayer SbSeBr proves to be a competitive channel material, offering a suitable band gap of 1.18 eV and a small electron effective mass (*) of 0.22. The 2D SbSeBr field effect transistor (FET) with 8 nm channel length exhibits a high on-state current of 1869 μA/μm, low power consumption of 0.080 fJ/μm, and small delay time of 0.062 ps, which can satisfy the requirements of the International Technology Roadmap for Semiconductors for high-performance devices. Moreover, despite the monolayer SbSeBr having an isotropic *, the asymmetrical band trends enable SbSeBr FETs to display transport orientation, which emphasizes the importance of band trends and provides valuable insights for selecting channel materials.
探索具有小载流子有效质量和合适带隙的二维（2D）材料对于金属氧化物半导体场效应晶体管（MOSFET）的设计至关重要。在此，基于第一性原理计算模拟了稳定的二维SbSeBr的量子输运特性。单层SbSeBr被证明是一种有竞争力的沟道材料，具有1.18 eV的合适带隙和0.22的小电子有效质量（）。沟道长度为8 nm的二维SbSeBr场效应晶体管（FET）表现出1869 μA/μm的高导通态电流、0.080 fJ/μm的低功耗和0.062 ps的小延迟时间，能够满足国际半导体技术路线图对高性能器件的要求。此外，尽管单层SbSeBr具有各向同性的，但其不对称的能带趋势使SbSeBr FET能够表现出输运取向，这突出了能带趋势的重要性，并为选择沟道材料提供了有价值的见解。
