Tung Cheng-Hsun, Ye Feng, Li Wei-Yi, Nguyen The Anh, Lee Ming-Chang, Wen Tao, Guo Zi-Hao, Cheng Stephen Z D, Ho Rong-Ming
Department of Chemical Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan.
South China Advanced Institute for Soft Matter Science and Technology, School of Molecular Science and Engineering, South China University of Technology, Guangzhou, 510640, China.
Small. 2024 Nov;20(48):e2403581. doi: 10.1002/smll.202403581. Epub 2024 Jul 19.
This work pioneers to combine fast self-assembly of polyhedral oligomeric silsesquioxanes (POSS) nanocage-based giant surfactants with high etching contrast and directed self-assembly for reliable long-range lateral order to create well-aligned sub-10 nm line nanopatterns via reactive ion etching (RIE). Polystyrene-block-oligo(dimethylsiloxane) substituted POSS (PS-b-oDMSPOSS) with seven oligo(dimethylsiloxane) at the corners of the POSS nanocage and one polystyrene (PS) tail is designed and synthesized as a giant surfactant with self-assembly behaviors like block copolymer (BCP). In contrast to BCP, oDMSPOSS gives a volume-persistent "nanoatom" particle with higher mobility for fast self-assembly and higher segregation strength with PS for smaller feature size. By taking advantage of directed self-assembly using nano-trench fabricated by electron beam lithography, well-ordered nanostructured monolayer with well-aligned parallel oDMSPOSS cylinders can be formed by confined self-assembly within the nano-trench. With the optimization of the RIE treatment using O as an etchant, the high etching contrast from the oDMSPOSS and PS gives the formation of well-defined line nanopatterns with sub-10 nm critical dimension that can serve as a mask for pattern transfer in lithography. These results demonstrate a cost-effective approach for nanopatterning by utilizing a creatively designed giant surfactant with sub-10 nm feature size and excellent etching contrast for modern lithographic applications.
这项工作率先将基于多面体低聚倍半硅氧烷（POSS）纳米笼的巨型表面活性剂的快速自组装与高蚀刻对比度和定向自组装相结合，以实现可靠的长程横向有序排列，从而通过反应离子蚀刻（RIE）创建排列良好的亚10纳米线纳米图案。设计并合成了在POSS纳米笼的角上带有七个聚二甲基硅氧烷基团和一个聚苯乙烯（PS）链段的聚苯乙烯-嵌段-聚二甲基硅氧烷取代的POSS（PS-b-oDMSPOSS），作为具有类似嵌段共聚物（BCP）自组装行为的巨型表面活性剂。与BCP相比，oDMSPOSS形成了具有更高迁移率以实现快速自组装的体积持久的“纳米原子”颗粒，并且与PS具有更高的相分离强度，从而能够形成更小的特征尺寸。通过利用电子束光刻制造的纳米沟槽进行定向自组装，通过在纳米沟槽内的受限自组装，可以形成具有排列良好的平行oDMSPOSS圆柱体的有序纳米结构单层。通过使用O作为蚀刻剂对RIE处理进行优化，oDMSPOSS和PS之间的高蚀刻对比度使得能够形成临界尺寸小于10纳米的明确线纳米图案，这些图案可作为光刻中图案转移的掩膜。这些结果展示了一种具有成本效益的纳米图案化方法，即利用一种具有创造性设计的、特征尺寸小于10纳米且具有出色蚀刻对比度的巨型表面活性剂用于现代光刻应用。
