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超导量子电路中钽氧化物和铌氧化物的结构与形成机制

Structure and Formation Mechanisms in Tantalum and Niobium Oxides in Superconducting Quantum Circuits.

作者信息

Oh Jin-Su, Zaman Rahim, Murthy Akshay A, Bal Mustafa, Crisa Francesco, Zhu Shaojiang, Torres-Castendo Carlos G, Kopas Cameron J, Mutus Joshua Y, Jing Dapeng, Zasadzinski John, Grassellino Anna, Romanenko Alex, Hersam Mark C, Bedzyk Michael J, Kramer Matt, Zhou Bi-Cheng, Zhou Lin

机构信息

Ames National Laboratory, Ames, Iowa 50011, United States.

Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States.

出版信息

ACS Nano. 2024 Jul 21;18(30):19732-41. doi: 10.1021/acsnano.4c05251.

Abstract

Improving the qubit's lifetime (T) is crucial for fault-tolerant quantum computing. Recent advancements have shown that replacing niobium (Nb) with tantalum (Ta) as the base metal significantly increases T, likely due to a less lossy native surface oxide. However, understanding the formation mechanism and nature of both surface oxides is still limited. Using aberration-corrected transmission electron microscopy and electron energy loss spectroscopy, we found that Ta surface oxide has fewer suboxides than Nb oxide. We observed an abrupt oxidation state transition from TaO to Ta, as opposed to the gradual shift from NbO, NbO, and NbO to Nb, consistent with thermodynamic modeling. Additionally, amorphous TaO exhibits a closer-to-crystalline bonding nature than NbO, potentially hindering H atomic diffusion toward the oxide/metal interface. Finally, we propose a loss mechanism arising from the transition between two states within the distorted octahedron in an amorphous structure, potentially causing two-level system loss. Our findings offer a deeper understanding of the differences between native amorphous Ta and Nb oxides, providing valuable insights for advancing superconducting qubits through surface oxide engineering.

摘要

提高量子比特的寿命(T)对于容错量子计算至关重要。最近的进展表明,用钽(Ta)替代铌(Nb)作为基底金属可显著提高T,这可能是由于原生表面氧化物的损耗较小。然而,对两种表面氧化物的形成机制和性质的理解仍然有限。使用像差校正透射电子显微镜和电子能量损失谱,我们发现Ta表面氧化物的低价氧化物比Nb氧化物少。我们观察到从TaO到Ta的氧化态突然转变,这与从NbO、NbO和NbO到Nb的逐渐转变相反,这与热力学模型一致。此外,非晶态TaO比NbO表现出更接近晶体的键合性质,这可能会阻碍H原子向氧化物/金属界面的扩散。最后,我们提出了一种由非晶结构中扭曲八面体内两种状态之间的转变引起的损耗机制,这可能导致两能级系统损耗。我们的研究结果为深入理解原生非晶态Ta和Nb氧化物之间的差异提供了帮助,为通过表面氧化物工程推进超导量子比特提供了有价值的见解。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dc2d/11295204/3ffec01df47a/nn4c05251_0001.jpg

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