Cao Yunqing, Guan Qinshuai, Hu Ruijin, Liu Zongguang, Zhou Yuxue, Xu Feng, Meng Xiangdong, Jiang Xiulin, Zhang Shaobo, Xu Jun
College of Physical Science and Technology/Microelectronics Industry Research Institute, Yangzhou University, 225002 Yangzhou, China.
School of Electronics Science and Engineering/National Laboratory of Solid State Microstructures, Nanjing University, 210093 Nanjing, China.
J Phys Chem Lett. 2024 Aug 8;15(31):7870-7877. doi: 10.1021/acs.jpclett.4c01773. Epub 2024 Jul 26.
High performance is a crucial factor in seeking a more competitive levelized cost of electricity for the extensive popularization of c-Si solar cells. Here, CsPbBr quantum dots (QDs) have been first applied as the light-converting layer to enhance the full-spectrum light response, resulting in an ∼71% enhancement of power conversion efficiency within silicon-based solar cells. Remarkably, even if the photon energy is smaller than the bandgap of CsPbBr QDs, the long-wavelength external quantum efficiency shows a significant increase. Such surprising results can be attributed to the nonradiative energy transfer (NRET) mechanism of CsPbBr QDs, which can transfer long-wavelength-generated dipoles into the Si base with the assistance of a Coulomb force. Furthermore, a dipole-transferring model, which considers that the AlO passivation layer would play a negative role in the NRET process, is creatively but supportively proposed. These results highlight a simple, low-cost but promising strategy to improve the performance of c-Si solar cells.
高性能是为广泛普及晶体硅(c-Si)太阳能电池寻求更具竞争力的平准化度电成本的关键因素。在此,CsPbBr量子点(QDs)首次被用作光转换层以增强全光谱光响应,从而使基于硅的太阳能电池的功率转换效率提高了约71%。值得注意的是,即使光子能量小于CsPbBr量子点的带隙,长波长外量子效率仍显著提高。这种惊人的结果可归因于CsPbBr量子点的非辐射能量转移(NRET)机制,该机制可在库仑力的帮助下将长波长产生的偶极子转移到硅基底中。此外,创造性地但有依据地提出了一种偶极子转移模型,该模型认为AlO钝化层在NRET过程中会起到负面作用。这些结果突出了一种简单、低成本但有前景的提高c-Si太阳能电池性能的策略。