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氦辐照 YBaCuO 薄膜中缺陷的时变演化及相关电学性能。

Temporal Evolution of Defects and Related Electric Properties in He-Irradiated YBaCuO Thin Films.

机构信息

Institute of Applied Physics, Johannes Kepler University Linz, 4040 Linz, Austria.

Faculty of Physics, University of Vienna, 1090 Vienna, Austria.

出版信息

Int J Mol Sci. 2024 Jul 18;25(14):7877. doi: 10.3390/ijms25147877.

DOI:10.3390/ijms25147877
PMID:39063119
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11277344/
Abstract

Thin films of the superconductor YBaCuO (YBCO) were modified by low-energy light-ion irradiation employing collimated or focused He beams, and the long-term stability of irradiation-induced defects was investigated. For films irradiated with collimated beams, the resistance was measured in situ during and after irradiation and analyzed using a phenomenological model. The formation and stability of irradiation-induced defects are highly influenced by temperature. Thermal annealing experiments conducted in an Ar atmosphere at various temperatures demonstrated a decrease in resistivity and allowed us to determine diffusion coefficients and the activation energy ΔE=(0.31±0.03) eV for diffusive oxygen rearrangement within the YBCO unit cell basal plane. Additionally, thin YBCO films, nanostructured by focused He-beam irradiation into vortex pinning arrays, displayed significant commensurability effects in magnetic fields. Despite the strong modulation of defect densities in these pinning arrays, oxygen diffusion during room-temperature annealing over almost six years did not compromise the signatures of vortex matching, which remained precisely at their magnetic fields predicted by the pattern geometry. Moreover, the critical current increased substantially within the entire magnetic field range after long-term storage in dry air. These findings underscore the potential of ion irradiation in tailoring the superconducting properties of thin YBCO films.

摘要

采用准直或聚焦的氦离子束对超导 YBaCuO(YBCO)薄膜进行低能轻离子辐照改性,并研究了辐照诱导缺陷的长期稳定性。对于准直束辐照的薄膜,在辐照过程中和辐照后原位测量电阻,并使用唯象模型进行分析。辐照诱导缺陷的形成和稳定性受温度的强烈影响。在不同温度的 Ar 气氛中进行的热退火实验表明电阻率降低,并允许我们确定扩散系数和在 YBCO 单元胞基面内氧重排的扩散激活能 ΔE=(0.31±0.03) eV。此外,通过聚焦氦离子束辐照成涡旋钉扎阵列,使薄的 YBCO 薄膜纳米结构化,在磁场中显示出显著的共格效应。尽管这些钉扎阵列中的缺陷密度强烈调制,但在室温下退火近六年期间的氧扩散并没有破坏涡旋匹配的特征,其仍精确地处于由图案几何形状预测的磁场位置。此外,在干燥空气中长期储存后,整个磁场范围内的临界电流显著增加。这些发现强调了离子辐照在调整薄 YBCO 薄膜超导性能方面的潜力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0b34/11277344/5df74502da2a/ijms-25-07877-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0b34/11277344/371c2deba9a6/ijms-25-07877-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0b34/11277344/d5274829daa0/ijms-25-07877-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0b34/11277344/5df74502da2a/ijms-25-07877-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0b34/11277344/371c2deba9a6/ijms-25-07877-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0b34/11277344/d5274829daa0/ijms-25-07877-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0b34/11277344/5df74502da2a/ijms-25-07877-g004.jpg

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