Zhang Libo, Ye Li, Zhao Weiwei, Huang Chongji, Liu Xue, Gao Wenshuai, Li Tao, Min Tai, Yang Jinbo, Tian Mingliang, Chen Xuegang
Center of Free Electron Laser & High Magnetic Field, Leibniz International Joint Research Center of Materials Sciences of Anhui Province, Anhui University, Hefei 230601, China.
School of Materials Science and Engineering, Anhui University, Hefei 230601, China.
Materials (Basel). 2024 Jul 13;17(14):3471. doi: 10.3390/ma17143471.
Time-dependent second-harmonic generation (TD-SHG) is an emerging sensitive and fast method to qualitatively evaluate the interface quality of the oxide/Si heterostructures, which is closely related to the interfacial electric field. Here, the TD-SHG is used to explore the interface quality of atomic layer deposited HfO films on Si substrates. The critical SHG parameters, such as the initial SHG signal and characteristic time constant, are compared with the fixed charge density (Qox) and the interface state density (Dit) extracted from the conventional electrical characterization method. It reveals that the initial SHG signal linearly decreases with the increase in Qox, while Dit is linearly correlated to the characteristic time constant. It verifies that the TD-SHG is a sensitive and fast method, as well as simple and noncontact, for evaluating the interface quality of oxide/Si heterostructures, which may facilitate the in-line semiconductor test.
时间分辨二次谐波产生（TD-SHG）是一种新兴的、灵敏且快速的方法，用于定性评估氧化物/硅异质结构的界面质量，该质量与界面电场密切相关。在此，TD-SHG被用于探究在硅衬底上原子层沉积的HfO薄膜的界面质量。将诸如初始SHG信号和特征时间常数等关键SHG参数，与从传统电学表征方法中提取的固定电荷密度（Qox）和界面态密度（Dit）进行比较。结果表明，初始SHG信号随Qox的增加呈线性下降，而Dit与特征时间常数呈线性相关。这证实了TD-SHG是一种灵敏、快速、简单且非接触的方法，可用于评估氧化物/硅异质结构的界面质量，这可能有助于在线半导体测试。
