Ulusoy Murat, Koçyiğit Serhat, Tataroğlu Adem, Altındal Yerişkin S
Department of Physics, Faculty of Science, Gazi University, Teknikokullar, 06500 Ankara, Türkiye.
Central Laboratory Application and Research Centre, Bingol University, 12000 Bingol, Türkiye.
ACS Omega. 2024 Jul 11;9(29):32243-32255. doi: 10.1021/acsomega.4c05219. eCollection 2024 Jul 23.
Five samples were fabricated to obtain a diode with a PVA interface, both with and without graphene doping at different rates with high rectification in the dark. The electrospinning method was employed to apply the doped and undoped solutions, creating the interlayers. Since the diode with a 1 wt % graphene-doped PVA interlayer outperformed the other samples, the main electrical and photodetector characteristics of this structure were investigated. The electrical parameters of the diode were probed by the TE, Norde, and Cheung methods, and the parameters ( and ϕ) acquired by both approaches were significantly influenced by illumination and voltages. The interface/surface state intensity values ( ) were also calculated in the dark and under each illumination as a function of the band/energy gap depth ( - ). The time-dependent steady-state conditions and rise-decay behavior of the photocurrents during illumination were also investigated. Due to the high photocurrent values, the photosensitivity at zero bias is approximately 1.4 × 10 at 100 mW cm. The responsivity and detectivity values appear to be altered significantly with changes in the illumination and voltage. Additionally, a double logarithmic plot of vs reveals good linearity with slope values ranging from 0.5 to 1.
制备了五个样品，以获得具有PVA界面的二极管，其中有无不同掺杂率的石墨烯，且在黑暗中具有高整流性。采用静电纺丝法施加掺杂和未掺杂的溶液，形成中间层。由于具有1 wt%石墨烯掺杂PVA中间层的二极管性能优于其他样品，因此研究了该结构的主要电学和光电探测器特性。通过TE、Norde和Cheung方法探测二极管的电学参数，两种方法获得的参数（和ϕ）受光照和电压的影响显著。还在黑暗中和每种光照下计算了界面/表面态强度值（）作为带隙/能隙深度（-）的函数。还研究了光照期间光电流的时间相关稳态条件和上升-衰减行为。由于高光电流值，在100 mW cm时零偏压下的光敏度约为1.4×10。响应度和探测率值似乎随光照和电压的变化而显著改变。此外，与的双对数图显示出良好的线性，斜率值范围为0.5至1。
