Gao Ming, Wei Wei, Wang Zhiyong, Yu Zhi Gen, Zhang Yong-Wei, Zhu Chunxiang
Department of Electrical and Computer Engineering, College of Design and Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Singapore.
Agency for Science, Technology and Research (A*STAR), Institute of High Performance Computing, 1 Fusionopolis Way, No. 16-16 Connexis, Singapore 138632, Singapore.
ACS Appl Mater Interfaces. 2024 Aug 7;16(31):41176-41184. doi: 10.1021/acsami.4c07955. Epub 2024 Jul 29.
The process development and optimization of p-type semiconductors and p-channel thin-film transistors (TFTs) are essential for the development of high-performance circuits. In this study, the Br-doped CuI (CuIBr) TFTs are proposed by the solution process to control copper vacancy generation and suppress excess holes formation in p-type CuI films and improve current modulation capabilities for CuI TFTs. The CuIBr films exhibit a uniform surface morphology and good crystalline quality. The on/off current (/) ratio of CuIBr TFTs increased from 10 to 10 with an increase in the Br doping ratio from 0 to 15%. Furthermore, the performance and operational stability of CuIBr TFTs are significantly enhanced by indium tin oxide (ITO) surface charge-transfer doping. The results obtained from the first-principles calculations well explain the electron-doping effect of ITO overlayer in CuIBr TFT. Eventually, the CuIBr TFT with 15% Br content exhibits a high / ratio of 3 × 10 and a high hole field-effect mobility (μ) of 7.0 cm V s. The band-like charge transport in CuIBr TFT is confirmed by the temperature-dependent measurement. This study paves the way for the realization of transparent complementary circuits and wearable electronics.
p型半导体和p沟道薄膜晶体管（TFT）的工艺开发与优化对于高性能电路的发展至关重要。在本研究中，通过溶液法提出了掺溴的碘化亚铜（CuIBr）TFT，以控制铜空位的产生并抑制p型CuI薄膜中过量空穴的形成，并提高CuI TFT的电流调制能力。CuIBr薄膜呈现出均匀的表面形貌和良好的晶体质量。随着溴掺杂比例从0增加到15%，CuIBr TFT的开/关电流（I）比从10增加到10。此外，通过氧化铟锡（ITO）表面电荷转移掺杂，CuIBr TFT的性能和操作稳定性得到显著增强。第一性原理计算得到的结果很好地解释了ITO覆盖层在CuIBr TFT中的电子掺杂效应。最终，溴含量为15%的CuIBr TFT表现出3×10的高I比和7.0 cm² V⁻¹ s⁻¹的高空穴场效应迁移率（μ）。通过温度相关测量证实了CuIBr TFT中的带状电荷传输。本研究为实现透明互补电路和可穿戴电子设备铺平了道路。
