Mude Narendra Naik, Bukke Ravindra Naik, Jang Jin
Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, Korea.
ACS Appl Mater Interfaces. 2021 May 5;13(17):20277-20287. doi: 10.1021/acsami.0c21979. Epub 2021 Apr 23.
The development of p-type metal-oxide semiconductors (MOSs) is of increasing interest for applications in next-generation optoelectronic devices, display backplane, and low-power-consumption complementary MOS circuits. Here, we report the high performance of solution-processed, p-channel copper-tin-sulfide-gallium oxide (CTSGO) thin-film transistors (TFTs) using UV/O exposure. Hall effect measurement confirmed the p-type conduction of CTSGO with Hall mobility of 6.02 ± 0.50 cm V s. The p-channel CTSGO TFT using UV/O treatment exhibited the field-effect mobility (μ) of 1.75 ± 0.15 cm V s and an on/off current ratio (/) of ∼10 at a low operating voltage of -5 V. The significant enhancement in the device performance is due to the good p-type CTSGO material, smooth surface morphology, and fewer interfacial traps between the semiconductor and the AlO gate insulator. Therefore, the p-channel CTSGO TFT can be applied for CMOS MOS TFT circuits for next-generation display.
p型金属氧化物半导体（MOS）的发展在下一代光电器件、显示背板和低功耗互补MOS电路中的应用越来越受到关注。在此，我们报道了采用紫外/臭氧（UV/O）曝光的溶液法制备的p沟道铜锡硫镓氧化物（CTSGO）薄膜晶体管（TFT）的高性能。霍尔效应测量证实了CTSGO的p型传导，霍尔迁移率为6.02±0.50 cm² V⁻¹ s⁻¹。采用UV/O处理的p沟道CTSGO TFT在-5 V的低工作电压下表现出1.75±0.15 cm² V⁻¹ s⁻¹的场效应迁移率（μ）和约10的开/关电流比（Ion/Ioff）。器件性能的显著提高归因于良好的p型CTSGO材料、光滑的表面形貌以及半导体与AlO栅极绝缘体之间较少的界面陷阱。因此，p沟道CTSGO TFT可应用于下一代显示的CMOS MOS TFT电路。
