High Performance of Solution-Processed Amorphous p-Channel Copper-Tin-Sulfur-Gallium Oxide Thin-Film Transistors by UV/O Photocuring.

The development of p-type metal-oxide semiconductors (MOSs) is of increasing interest for applications in next-generation optoelectronic devices, display backplane, and low-power-consumption complementary MOS circuits. Here, we report the high performance of solution-processed, p-channel copper-tin-sulfide-gallium oxide (CTSGO) thin-film transistors (TFTs) using UV/O exposure. Hall effect measurement confirmed the p-type conduction of CTSGO with Hall mobility of 6.02 ± 0.50 cm V s. The p-channel CTSGO TFT using UV/O treatment exhibited the field-effect mobility (μ) of 1.75 ± 0.15 cm V s and an on/off current ratio (/) of ∼10 at a low operating voltage of -5 V. The significant enhancement in the device performance is due to the good p-type CTSGO material, smooth surface morphology, and fewer interfacial traps between the semiconductor and the AlO gate insulator. Therefore, the p-channel CTSGO TFT can be applied for CMOS MOS TFT circuits for next-generation display.