Cai Zhiwei, Tan Runan, Zhang Xingye, Ren Xiaoming, Gao Nan, Wang Ruling, Li Mingkai, He Hanping, He Yunbin, Chang Gang
Ministry of Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei Key Laboratory of Polymer Materials, School of Materials Science and Engineering, Hubei University, Wuhan, 430062, China.
College of Health Science and Engineering, Hubei University, Wuhan, 430062, China.
Mikrochim Acta. 2024 Jul 29;191(8):493. doi: 10.1007/s00604-024-06577-w.
A solution-gate controlled thin-film transistor with SnO epitaxial thin films (SnO-SGTFT) is successfully utilized for highly sensitive detection of nitrite. The SnO films are deposited as channel materials on a c-plane sapphire (c-AlO) substrate through pulsed laser deposition (PLD), with superior crystal quality and out-of-plane atomic ordering. PtAu NPs/rGO nanocomposites are electrodeposited on a gold electrode to function as a transistor gate to further enhance the nitrite catalytic performance of the device. The change in effective gate voltage due to the electrooxidation of nitrite on the gate electrode is the primary sensing mechanism of the device. Based on the inherent amplification effect of transistors, the superior electrical properties of SnO, and the high electrocatalytic activity of PtAu NPs/rGO, the SnO-SGTFT sensor has a low detection limit of 0.1 nM and a wide linear detection range of 0.1 nM ~ 50 mM at V = 1.0 V. Furthermore, the sensor has excellent characteristics such as rapid response time, selectivity, and stability. The practicability of the device has been confirmed by the quantitative detection of nitrite in natural lake water. SnO epitaxial films grown by PLD provide a simple and efficient way to fabricate nitrite SnO-SGTFT sensors in environmental monitoring and food safety, among others. It also provides a reference for the construction of other high-performance thin-film transistor sensors.
一种具有SnO外延薄膜的溶液栅控薄膜晶体管（SnO-SGTFT）被成功用于亚硝酸盐的高灵敏度检测。通过脉冲激光沉积（PLD）在c面蓝宝石（c-Al₂O₃）衬底上沉积SnO薄膜作为沟道材料，其具有优异的晶体质量和面外原子有序性。将PtAu NPs/rGO纳米复合材料电沉积在金电极上作为晶体管栅极，以进一步增强器件的亚硝酸盐催化性能。由于亚硝酸盐在栅电极上的电氧化导致的有效栅极电压变化是该器件的主要传感机制。基于晶体管固有的放大效应、SnO优异的电学性能以及PtAu NPs/rGO的高电催化活性，SnO-SGTFT传感器在V = 1.0 V时具有0.1 nM的低检测限和0.1 nM至50 mM的宽线性检测范围。此外，该传感器具有响应时间快、选择性好和稳定性高等优异特性。通过对天然湖水中亚硝酸盐的定量检测证实了该器件的实用性。通过PLD生长的SnO外延薄膜为在环境监测和食品安全等领域制造亚硝酸盐SnO-SGTFT传感器提供了一种简单有效的方法。它也为构建其他高性能薄膜晶体管传感器提供了参考。
