Department of Chemical Engineering, Polytechnique Montréal , H3T 1J4 Montreal, Canada.
CNR-Istituto di Chimica della Materia Condensata e di Tecnologie per l'Energia, Consiglio Nazionale delle Ricerche (ICMATE-CNR) and Dipartimento di Scienze Chimiche, Università di Padova , Via F. Marzolo 1, Padova 35131, Italy.
ACS Appl Mater Interfaces. 2017 Oct 25;9(42):37013-37021. doi: 10.1021/acsami.7b09912. Epub 2017 Oct 13.
Metal oxide semiconductors are interesting for next-generation flexible and transparent electronics because of their performance and reliability. Tin dioxide (SnO) is a very promising material that has already found applications in sensing, photovoltaics, optoelectronics, and batteries. In this work, we report on electrolyte-gated, solution-processed polycrystalline SnO transistors on both rigid and flexible substrates. For the transistor channel, we used both unpatterned and patterned SnO films. Since decreasing the SnO area in contact with the electrolyte increases the charge-carrier density, patterned transistors operate in the depletion mode, whereas unpatterned ones operate in the enhancement mode. We also fabricated flexible SnO transistors that operate in the enhancement mode that can withstand moderate mechanical bending.
金属氧化物半导体因其性能和可靠性而成为下一代柔性透明电子产品的研究热点。二氧化锡 (SnO) 是一种很有前途的材料，已经在传感、光伏、光电和电池领域得到了应用。在这项工作中，我们报告了在刚性和柔性衬底上通过电解质门控、溶液处理的多晶 SnO 晶体管。对于晶体管通道，我们同时使用了无图案和有图案的 SnO 薄膜。由于与电解质接触的 SnO 面积的减小会增加载流子密度，因此图案化晶体管工作在耗尽模式，而非图案化晶体管工作在增强模式。我们还制造了能够在增强模式下工作且能够承受适度机械弯曲的柔性 SnO 晶体管。
