Picavet Ewout, De Geest Kobe, Lievens Enes, Rijckaert Hannes, Vandekerckhove Tom, Solano Eduardo, Deduytsche Davy, Van Bossele Laura, Van Thourhout Dries, De Buysser Klaartje, Beeckman Jeroen
SCRiPTS, Department of Chemistry, Ghent University, Krijgslaan 281-S3, 9000 Ghent, Belgium.
LCP Group, Department of Electronics and Information Systems, Ghent University, Technologiepark - Zwijnaarde 126, 9052 Gent, Belgium.
ACS Appl Mater Interfaces. 2024 Aug 7;16(31):41134-41144. doi: 10.1021/acsami.4c07073. Epub 2024 Jul 30.
In contrast to the widely studied electrical properties of Pb(Zr,Ti)O thin films, which have led to their applicability in various application areas such as thin film capacitors, microelectronics, and ferroelectric memories, the electro-optic (EO) properties are far less studied, which hinders the applicability of Pb(Zr,Ti)O films for EO applications such as heterogeneously integrated phase modulators in silicon (Si) photonics. Therefore, the EO properties of Pb(Zr,Ti)O films need to be further investigated to pave the way for the applicability of Pb(Zr,Ti)O films in EO applications. As the EO properties of ferroelectric thin films strongly depend on their crystal phase and texture, which in turn are influenced by the method of film fabrication. Therefore, in this work, we investigate the EO properties of a promising solution process using a LaOCO template film. We successively characterize the precursor ink, microstructure and EO properties of the solution-processed Pb(Zr,Ti)Ofilm. The Pb(Zr,Ti)O film exhibits a fiber texture and has a large maximum and remnant Pockels coefficient () of 69 pm V and 66 pm V, respectively. The integration into a ring resonator-based modulator shows a VL of 2.019 V cm. The determination of these promising EO properties could further pave the way for the applicability of Pb(Zr,Ti)O thin films in Si photonics.
与对Pb(Zr,Ti)O薄膜广泛研究的电学性质不同，其电学性质已使其适用于诸如薄膜电容器、微电子学和铁电存储器等各种应用领域，而其电光（EO）性质的研究则少得多，这阻碍了Pb(Zr,Ti)O薄膜在诸如硅（Si）光子学中的异质集成相位调制器等电光应用中的适用性。因此，需要进一步研究Pb(Zr,Ti)O薄膜的电光性质，为其在电光应用中的适用性铺平道路。由于铁电薄膜的电光性质强烈依赖于其晶相和织构，而晶相和织构又受薄膜制备方法的影响。因此，在这项工作中，我们研究了使用LaOCO模板薄膜的一种有前景的溶液法的电光性质。我们依次表征了溶液法制备的Pb(Zr,Ti)O薄膜的前驱体墨水、微观结构和电光性质。该Pb(Zr,Ti)O薄膜呈现纤维织构，其最大和剩余普克尔系数（）分别高达69 pm V和66 pm V。将其集成到基于环形谐振器的调制器中显示出2.019 V cm的半波电压。确定这些有前景的电光性质可为Pb(Zr,Ti)O薄膜在硅光子学中的适用性进一步铺平道路。
