Yang Ying, Zhao Ruirui, Chen Yong P
Department of Engineering Science, Faculty of Innovation Engineering, Macau University of Science and Technology Av. Wai Long Macao SAR 999078 China
Institute of New Energy for Vehicles, School of Materials Science and Engineering, Tongji University Shanghai 201804 China.
RSC Adv. 2024 Jul 31;14(33):23902-23909. doi: 10.1039/d4ra03161j. eCollection 2024 Jul 26.
Recently, aluminum ion batteries (AIBs) have attracted more attention due to the reliable, cost-effective, and air-stable Al metal anode. Among various cathode materials of AIBs, graphite was paid more attention owing to its high-voltage plateau and stable properties in storing chloroaluminate anions (AlCl ). However, its low capacity limits the real application and can not satisfy the requirements of modern society. To solve the above issue, herein, boron (B)-doping expanded graphite (B-EG) was prepared by thermal treatment of expanded graphite and boric acid together in a reduction atmosphere. Based on the structural and electrochemical characterization, the results show that B-doping amplifies the interlayer space of expanded graphite (EG), introduces more mesoporous structures, and induces electron deficiency, which is beneficial to accelerating the transfer and adsorption of active ions. The results indicate that the B-EG electrode exhibits excellent rate capability and a high specific capacity of 84.9 mA h g at 500 mA g. Compared with the EG electrode, B-EG shows better cycle stability with the specific capacity of 87.7 mA h g after 300 cycles, which could be attributed to lower pulverization and higher pseudo-capacitance contribution of B-EG after the introduction of B species.
近年来,铝离子电池(AIBs)因其可靠、经济高效且空气稳定的铝金属负极而备受关注。在AIBs的各种正极材料中,石墨因其高电压平台以及在储存氯铝酸盐阴离子(AlCl )时的稳定性能而受到更多关注。然而,其低容量限制了实际应用,无法满足现代社会的需求。为了解决上述问题,在此通过在还原气氛中将膨胀石墨和硼酸一起进行热处理制备了硼(B)掺杂膨胀石墨(B-EG)。基于结构和电化学表征,结果表明B掺杂扩大了膨胀石墨(EG)的层间距,引入了更多的介孔结构,并导致电子缺乏,这有利于加速活性离子的转移和吸附。结果表明,B-EG电极在500 mA g下表现出优异的倍率性能和84.9 mA h g的高比容量。与EG电极相比,B-EG在300次循环后表现出更好的循环稳定性,比容量为87.7 mA h g,这可归因于引入B物种后B-EG的较低粉化和较高的赝电容贡献。