High-Dimensional Physical Reservoir with Back-End-of-Line-Compatible Tin Monoxide Thin-Film Transistor.

This work demonstrates a physical reservoir using a back-end-of-line compatible thin-film transistor (TFT) with tin monoxide (SnO) as the channel material for neuromorphic computing. The electron trapping and time-dependent detrapping at the channel interface induce the SnO·TFT to exhibit fading memory and nonlinearity characteristics, the critical assets for physical reservoir computing. The three-terminal configuration of the TFT allows the generation of higher-dimensional reservoir states by simultaneously adjusting the bias conditions of the gate and drain terminals, surpassing the performances of typical two-terminal-based reservoirs such as memristors. The high-dimensional SnO TFT reservoir performs exceptionally in two benchmark tests, achieving a 94.1% accuracy in Modified National Institute of Standards and Technology handwritten number recognition and a normalized root-mean-square error of 0.089 in Mackey-Glass time-series prediction. Furthermore, it is suitable for vertical integration because its fabrication temperature is <250 °C, providing the benefit of achieving a high integration density.