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用于逻辑和光电传感器操作的基于氧化物薄膜晶体管的垂直堆叠互补逆变器。

Oxide Thin-Film Transistor-Based Vertically Stacked Complementary Inverter for Logic and Photo-Sensor Operations.

作者信息

Joo Hyo-Jun, Shin Min-Gyu, Jung Hwan-Seok, Cha Hyun-Seok, Nam Donguk, Kwon Hyuck-In

机构信息

School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea.

School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.

出版信息

Materials (Basel). 2019 Nov 20;12(23):3815. doi: 10.3390/ma12233815.

DOI:10.3390/ma12233815
PMID:31757045
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6926960/
Abstract

Numerous studies have addressed the utilization of oxide thin-film transistor (TFT)-based complementary logic circuits that are based on two-dimensional (2D) planar structures. However, there are fundamental limits to the 2D planar structured complementary logic circuits, such as a large dimension and a large parasitic resistance. This work demonstrated a vertically stacked three-dimensional complementary inverter composed of a p-channel tin monoxide (SnO) TFT and an n-channel indium-gallium-zinc oxide (IGZO) TFT. A bottom-gate p-channel SnO TFT was formed on the top-gate n-channel IGZO TFT with a shared common gate electrode. The fabricated vertically stacked complementary inverter exhibited full swing characteristics with a voltage gain of ~33.6, a high noise margin of 3.13 V, and a low noise margin of 3.16 V at a supplied voltage of 10 V. The achieved voltage gain of the fabricated complementary inverter was higher than that of the vertically stacked complementary inverters composed of other oxide TFTs in previous works. In addition, we showed that the vertically stacked complementary inverter exhibited excellent visible-light photoresponse. This indicates that the oxide TFT-based vertically stacked complementary inverter can be used as a sensitive photo-sensor operating in the visible spectral range with the voltage read-out scheme.

摘要

许多研究都涉及基于二维（2D）平面结构的氧化物薄膜晶体管（TFT）互补逻辑电路的应用。然而，二维平面结构的互补逻辑电路存在一些基本限制，例如尺寸大且寄生电阻大。这项工作展示了一种由p沟道一氧化锡（SnO）TFT和n沟道铟镓锌氧化物（IGZO）TFT组成的垂直堆叠三维互补反相器。在具有共享公共栅电极的顶栅n沟道IGZO TFT上形成底栅p沟道SnO TFT。所制造的垂直堆叠互补反相器在10 V的供电电压下表现出全摆幅特性，电压增益约为33.6，高噪声容限为3.13 V，低噪声容限为3.16 V。所制造的互补反相器实现的电压增益高于先前工作中由其他氧化物TFT组成的垂直堆叠互补反相器。此外，我们表明垂直堆叠互补反相器表现出优异的可见光光响应。这表明基于氧化物TFT的垂直堆叠互补反相器可以用作在可见光谱范围内工作的灵敏光电传感器，并采用电压读出方案。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6c78/6926960/9c86d1360c6c/materials-12-03815-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6c78/6926960/b8c1835897db/materials-12-03815-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6c78/6926960/38bb6a061dca/materials-12-03815-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6c78/6926960/c1834d7d480a/materials-12-03815-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6c78/6926960/6e7f51d60d43/materials-12-03815-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6c78/6926960/b3e5108729a1/materials-12-03815-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6c78/6926960/2de4e3ba6598/materials-12-03815-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6c78/6926960/9c86d1360c6c/materials-12-03815-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6c78/6926960/b8c1835897db/materials-12-03815-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6c78/6926960/38bb6a061dca/materials-12-03815-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6c78/6926960/c1834d7d480a/materials-12-03815-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6c78/6926960/6e7f51d60d43/materials-12-03815-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6c78/6926960/b3e5108729a1/materials-12-03815-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6c78/6926960/2de4e3ba6598/materials-12-03815-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6c78/6926960/9c86d1360c6c/materials-12-03815-g007.jpg

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