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用于磁共振成像应用的基于声光的时域电场传感器。

Acousto-optic-based time domain electric field sensor for magnetic resonance imaging applications.

作者信息

Yaras Yusuf S, Bradley Lee W, Yildirim D Korel, Lederman Robert J, Kocaturk Ozgur, Oshinski John, Degertekin F Levent

机构信息

Georgia Institute of Technology, G.W. Woodruff School of Mechanical Engineering, Atlanta, Georgia, United States.

National Institutes of Health, National Heart Lung and Blood Institute, Bethesda, Maryland, United States.

出版信息

Opt Eng. 2024 Mar;63(3). doi: 10.1117/1.oe.63.3.031008. Epub 2024 Jan 20.

Abstract

An acousto-optic (AO)-based electric field sensor is presented for time domain measurement under magnetic resonance imaging (MRI). A fully MR-compatible sensor is designed and fabricated using a phase-shifted fiber Bragg grating mechanically coupled to a piezoelectric transducer. Mechanical resonance of the piezoelectric transducer is matched to the operating frequencies of commonly used MRI systems to increase the sensitivity of the sensor. Sensitivity of the sensor is measured as 1.27 mV/V/m, with a minimum detectable electric field of 4.4 mV/m/√/Hz. Directivity of the sensor is measured with a 18 dB orthogonal component rejection. The dynamic range of the sensor is calculated as 117 dB/Hz, which allows the measurement of electric fields up to 3.2 kV/m. In MRI studies, the AO sensor was able detect local hot spots around a reference implant accurately with high signal-to-noise ratio. AO sensor exhibited similar or better performance when compared with commercially available MRI compatible electric field sensors. Furthermore, the small size of the sensor with the flexible fiber optic link could allow measurements of electric fields during critical interventional procedures such as pacemaker lead or deep brain stimulator placement as an MRI dosimeter during diagnostic scans.

摘要

提出了一种基于声光(AO)的电场传感器,用于磁共振成像(MRI)下的时域测量。使用与压电换能器机械耦合的相移光纤布拉格光栅设计并制造了一种完全与MR兼容的传感器。压电换能器的机械共振与常用MRI系统的工作频率相匹配,以提高传感器的灵敏度。该传感器的灵敏度测量为1.27 mV/V/m,最小可检测电场为4.4 mV/m/√/Hz。传感器的方向性通过18 dB的正交分量抑制来测量。传感器的动态范围计算为117 dB/Hz,这使得能够测量高达3.2 kV/m的电场。在MRI研究中,AO传感器能够以高信噪比准确检测参考植入物周围的局部热点。与市售的MRI兼容电场传感器相比,AO传感器表现出相似或更好的性能。此外,具有柔性光纤链路的传感器尺寸小,这使得在诸如起搏器导线或深部脑刺激器放置等关键介入手术期间,作为诊断扫描期间的MRI剂量计能够测量电场。

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本文引用的文献

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