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溶液衍生的锗-锑-硒-碲相变硫族化物薄膜。

Solution-derived Ge-Sb-Se-Te phase-change chalcogenide films.

作者信息

Kang Myungkoo, Sharma Rashi, Blanco Cesar, Wiedeman Daniel, Altemose Quentin, Lynch Patrick E, Sop Tagne Gil B J, Zhang Yifei, Shalaginov Mikhail Y, Popescu Cosmin-Constantin, Triplett Brandon M, Rivero-Baleine Clara, Schwarz Casey M, Agarwal Anuradha M, Gu Tian, Hu Juejun, Richardson Kathleen A

机构信息

New York State College of Ceramics, Alfred University, Alfred, NY, USA.

College of Optics and Photonics, CREOL, University of Central Florida, Orlando, FL, USA.

出版信息

Sci Rep. 2024 Aug 5;14(1):18151. doi: 10.1038/s41598-024-69045-8.

DOI:10.1038/s41598-024-69045-8
PMID:39103371
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11300797/
Abstract

Ge-Sb-Se-Te chalcogenides, namely Se-substituted Ge-Sb-Te, have been developed as an alternative optical phase change material (PCM) with a high figure-of-merit. A need for the integration of such new PCMs onto a variety of photonic platforms has necessitated the development of fabrication processes compatible with diverse material compositions as well as substrates of varying material types, shapes, and sizes. This study explores the application of chemical solution deposition as a method capable of creating conformally coated layers and delves into the resulting modifications in the structural and optical properties of Ge-Sb-Se-Te PCMs. Specifically, we detail the solution-based deposition of Ge-Sb-Se-Te layers and present a comparative analysis with those deposited via thermal evaporation. We also discuss our ongoing endeavor to improve available choice of processing-material combinations and how to realize solution-derived high figure-of-merit optical PCM layers, which will enable a new era for the development of reconfigurable photonic devices.

摘要

锗锑硒碲硫族化合物,即硒取代的锗锑碲,已被开发成为一种具有高优值的替代光学相变材料(PCM)。将此类新型PCM集成到各种光子平台的需求,使得开发与多种材料成分以及不同材料类型、形状和尺寸的衬底兼容的制造工艺成为必要。本研究探索了化学溶液沉积作为一种能够形成保形涂层的方法的应用,并深入研究了锗锑硒碲PCM的结构和光学性质由此产生的变化。具体而言,我们详细介绍了基于溶液的锗锑硒碲层沉积,并与通过热蒸发沉积的层进行了对比分析。我们还讨论了我们正在进行的努力,以改善可用的加工-材料组合选择,以及如何实现源自溶液的高优值光学PCM层,这将为可重构光子器件的发展开启一个新时代。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b9e/11300797/8a5a783e0110/41598_2024_69045_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b9e/11300797/f418a95866b0/41598_2024_69045_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b9e/11300797/8920fe5a4900/41598_2024_69045_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b9e/11300797/9512b00ff0b1/41598_2024_69045_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b9e/11300797/edde1f255ae1/41598_2024_69045_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b9e/11300797/0c7b0a3f95ad/41598_2024_69045_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b9e/11300797/894155e11932/41598_2024_69045_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b9e/11300797/1db3c9944be2/41598_2024_69045_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b9e/11300797/8a5a783e0110/41598_2024_69045_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b9e/11300797/f418a95866b0/41598_2024_69045_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b9e/11300797/8920fe5a4900/41598_2024_69045_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b9e/11300797/9512b00ff0b1/41598_2024_69045_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b9e/11300797/edde1f255ae1/41598_2024_69045_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b9e/11300797/0c7b0a3f95ad/41598_2024_69045_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b9e/11300797/894155e11932/41598_2024_69045_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b9e/11300797/1db3c9944be2/41598_2024_69045_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b9e/11300797/8a5a783e0110/41598_2024_69045_Fig8_HTML.jpg

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本文引用的文献

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Phase-Change Memory from Molecular Tellurides.基于分子碲化物的相变存储器。
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