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使用 SCAPS 模拟比较基于 Pb 和 Sn 的钙钛矿太阳能电池:环保型 CsSnI 器件的最佳效率。

Comparison of Pb-based and Sn-based perovskite solar cells using SCAPS simulation: optimal efficiency of eco-friendly CsSnI devices.

机构信息

Department of Photonics and Plasma, Faculty of Physics, University of Kashan, Kashan, 87317, Iran.

Institute of Nanoscience and Nanotechnology, University of Kashan, Kashan, 87317, Iran.

出版信息

Environ Sci Pollut Res Int. 2024 Aug;31(39):51447-51460. doi: 10.1007/s11356-024-34622-x. Epub 2024 Aug 7.

Abstract

In this study, we employed the one-dimensional solar cell capacitance simulator (SCAPS-1D) software to optimize the performance of Pb-based and Sn-based (Pb-free) all-inorganic perovskites (AIPs) and organic-inorganic perovskites (OIPs) in perovskite solar cell (PSC) structures. Due to the higher stability of AIPs, the performance of PSCs incorporating Cs-based perovskites was compared with that of FA-based perovskites, which are more stable than their MA-based counterparts. The impact of AIPs such as CsPbCl, CsPbBr, CsPbI, CsSnCl, CsSnBr, and CsSnI, as well as including FAPbCl, FAPbBr, FAPbI, FASnCl, FASnBr, and FASnI, was investigated. SnO and CuO were selected as an inorganic electron transport layer (ETL) and a hole transport layer (HTL), respectively. CsSnBr₃, CsSnI₃, FASnCl₃, and FASnBr₃ exhibited higher efficiency compared to their Pb-based counterparts. Additionally, most Cs-based perovskites, excluding CsPbI₃, demonstrated better performance relative to their FA counterparts. CsSnI AIP device also shows the highest short circuit current density (J) of 32.85 mA/cm, the best power conversion efficiency (PCE) of 16.00%, and the least recombination at the SnO/CsSnI interface. The thickness, doping, and total defect density of CsSnI PSC have been systematically investigated and optimized to obtain the PCE of 17.36%. These findings highlight the potential of CsSnI PSCs as efficient and environmentally friendly PSCs.

摘要

在这项研究中,我们采用了一维太阳能电池电容模拟器(SCAPS-1D)软件来优化基于铅和锡的(无铅)全无机钙钛矿(AIPs)和有机-无机钙钛矿(OIPs)在钙钛矿太阳能电池(PSC)结构中的性能。由于 AIPs 的稳定性更高,我们比较了含有 Cs 基钙钛矿的 PSCs 的性能与 FA 基钙钛矿的性能,后者比 MA 基钙钛矿更稳定。我们研究了 AIPs 如 CsPbCl、CsPbBr、CsPbI、CsSnCl、CsSnBr 和 CsSnI,以及包括 FAPbCl、FAPbBr、FAPbI、FASnCl、FASnBr 和 FASnI 在内的性能。SnO 和 CuO 分别被选为无机电子传输层(ETL)和空穴传输层(HTL)。CsSnBr₃、CsSnI₃、FASnCl₃ 和 FASnBr₃ 的效率高于其 Pb 基对应物。此外,大多数 Cs 基钙钛矿,除了 CsPbI₃,与它们的 FA 对应物相比,表现出更好的性能。CsSnI AIP 器件还显示出最高的短路电流密度(J)为 32.85 mA/cm,最佳功率转换效率(PCE)为 16.00%,以及在 SnO/CsSnI 界面处最小的复合。我们系统地研究和优化了 CsSnI PSC 的厚度、掺杂和总缺陷密度,以获得 17.36%的 PCE。这些发现凸显了 CsSnI PSC 作为高效和环保的 PSC 的潜力。

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