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用于柔性平台电子产品的含氟有机交联剂对高聚物介电层进行表面工程处理。

Surface engineering of high- polymeric dielectric layers with a fluorinated organic crosslinker for use in flexible-platform electronics.

作者信息

Ye Heqing, Kwon Hyeok-Jin, Ryu Ka Yeon, Wu Kaibin, Park Jeongwan, Babita Giri, Kim Inae, Yang Chanwoo, Kong Hoyoul, Kim Se Hyun

机构信息

School of Flexible Electronics (SoFE), Henan Institute of Flexible Electronics (HIFE), Henan University 379 Mingli Road Zhengzhou 450046 China.

School of Chemical Engineering, Konkuk University Seoul 05029 Korea.

出版信息

Nanoscale Adv. 2024 Jun 27;6(16):4119-4127. doi: 10.1039/d3na01018j. eCollection 2024 Aug 6.

DOI:10.1039/d3na01018j
PMID:39114159
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11302166/
Abstract

High- polymeric layers were prepared by combining various functional groups and were applied as gate dielectrics for practical organic field-effect transistors (OFETs). Crosslinking of the polymeric layers through UV-assisted organic azide fluorine-based crosslinkers induced dramatic improvements in the electrical performance of the OFET, such as field-effect mobility and bias-stress stability. Our synthesis and manufacturing method can be a useful technique for ensuring device operation stability and electrical property enhancement. With this analysis, we further applied our polymer-dielectric OFETs to flexible-platform-based electronic components, including unit OFETs and simple logic devices (NOT, NAND, and NOR gates). The outcomes of this research and development suggest a suitable method for the low-cost mass production of large-area flexible and printable devices, using a printing-based approach to replace current processes.

摘要

通过结合各种官能团制备了高聚物层，并将其用作实际有机场效应晶体管（OFET）的栅极电介质。通过紫外线辅助的有机叠氮化物氟基交联剂对聚合物层进行交联，显著改善了OFET的电学性能，如场效应迁移率和偏置应力稳定性。我们的合成和制造方法可能是确保器件操作稳定性和增强电学性能的有用技术。通过这种分析，我们进一步将聚合物介电OFET应用于基于柔性平台的电子元件，包括单元OFET和简单逻辑器件（非门、与非门和或非门）。这项研发成果表明了一种使用基于印刷的方法来取代当前工艺，以低成本大规模生产大面积柔性和可印刷器件的合适方法。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4ae5/11302166/14a9e5e2b0d2/d3na01018j-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4ae5/11302166/b0134ade8c5c/d3na01018j-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4ae5/11302166/9bd2e0cf7cf8/d3na01018j-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4ae5/11302166/d860454d17fe/d3na01018j-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4ae5/11302166/9bb5602441ec/d3na01018j-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4ae5/11302166/14a9e5e2b0d2/d3na01018j-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4ae5/11302166/b0134ade8c5c/d3na01018j-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4ae5/11302166/9bd2e0cf7cf8/d3na01018j-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4ae5/11302166/d860454d17fe/d3na01018j-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4ae5/11302166/9bb5602441ec/d3na01018j-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4ae5/11302166/14a9e5e2b0d2/d3na01018j-f5.jpg

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本文引用的文献

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Strategy for Selective Printing of Gate Insulators Customized for Practical Application in Organic Integrated Devices.
用于有机集成器件实际应用的定制栅极绝缘体选择性印刷策略。
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