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用于具有高操作稳定性的柔性晶体管和逻辑门的无定形氟化丙烯酸酯聚合物电介质。

Amorphous Fluorinated Acrylate Polymer Dielectrics for Flexible Transistors and Logic Gates with High Operational Stability.

机构信息

Department of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Korea.

Research Institute for Green Energy Convergence Techonology, Gyeongsang National University, Jinju 52828, Republic of Korea.

出版信息

ACS Appl Mater Interfaces. 2023 Jul 12;15(27):32610-32620. doi: 10.1021/acsami.3c02010. Epub 2023 Jun 27.

Abstract

Fluorinated amorphous polymeric gate-insulating materials for organic thin-film transistors (OTFTs) not only form hydrophobic surfaces but also significantly reduce traps at the interface between the organic semiconductor and gate insulator. Therefore, these polymeric materials can enhance the OTFT's operation stability. In this study, we synthesized a new polymeric insulating material series composed of acrylate and fluorinated functional groups (with different ratios) named MBHCa-F and used them as gate insulators for OTFTs and in other applications. The insulating features of the MBHCa-F polymers, including surface energy, surface atomic content properties, dielectric constant, and leakage current, were clearly analyzed with respect to the content of the fluorinated functional groups. At higher fluorine-based functional group content, the polymeric series exhibited higher fluorine-based contents at the surface and superior electrical properties, such as field-effect mobility and driving stability, at OTFTs. Therefore, we believe that this study provides a substantial method for synthesizing polymeric insulating materials to enhance the operational stability and electrical performance of OTFTs.

摘要

用于有机薄膜晶体管(OTFTs)的氟化非晶态聚合体栅极绝缘材料不仅形成疏水表面,而且还能显著减少有机半导体和栅极绝缘层之间界面处的陷阱。因此,这些聚合材料可以提高 OTFT 的工作稳定性。在这项研究中,我们合成了一系列由丙烯酸酯和氟化官能团(不同比例)组成的新型聚合体绝缘材料,命名为 MBHCa-F,并将其用作 OTFT 及其他应用的栅极绝缘材料。MBHCa-F 聚合物的绝缘特性,包括表面能、表面原子含量特性、介电常数和漏电流,都与氟化官能团的含量进行了明确的分析。在更高的含氟官能团含量下,该聚合系列在表面呈现出更高的含氟含量,并在 OTFT 中表现出更高的场效应迁移率和驱动稳定性等优异的电性能。因此,我们相信这项研究为合成聚合体绝缘材料提供了一种重要的方法,以提高 OTFT 的工作稳定性和电性能。

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