Zhang Yiming, Li Bo, Han Zhijia, Feng Tao, Liu Zhenghao, Wu Xinzhi, Wang Qianjin, Zhu Kang, Hou Pengfei, Liu Weishu
School of Materials Science and Engineering, Xiangtan University, Hunan, Xiangtan 411105, People's Republic of China.
Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China.
Nanotechnology. 2024 Aug 23;35(45). doi: 10.1088/1361-6528/ad6e89.
Low-cost, highly efficient thermoelectric thin-film materials are becoming increasingly popular as miniaturization progresses. MgSbhas great potential due to its low cost and high performance. However, the fabrication of MgSbthin films with high power factors (PFs) poses a certain challenge. In this work, we propose a general approach to prepare MgSbthin films with excellent thermoelectric properties. Using a two-step thermal evaporation and rapid annealing process, (001)-oriented MgSbthin films are fabricated on-plane-oriented AlOsubstrates. The structure of the film orientation is optimized by controlling the film thickness, which modulates the thermoelectric performance. The PF of the MgSbat 500 nm (14W·m·K) would increase to 169W·m·Kwith Ag doping (MgAgSb) at room temperature. This work provides a new strategy for the development of high-performance thermoelectric thin films at room temperature.
随着小型化的不断发展，低成本、高效率的热电薄膜材料越来越受到青睐。MgSb因其低成本和高性能而具有巨大潜力。然而，制备具有高功率因子（PFs）的MgSb薄膜面临一定挑战。在这项工作中，我们提出了一种制备具有优异热电性能的MgSb薄膜的通用方法。采用两步热蒸发和快速退火工艺，在面取向的AlO衬底上制备了（001）取向的MgSb薄膜。通过控制薄膜厚度优化薄膜取向结构，从而调节热电性能。室温下，500 nm厚的MgSb（14W·m·K）薄膜经Ag掺杂（MgAgSb）后，其PF将提高到169W·m·K。这项工作为室温下高性能热电薄膜的开发提供了一种新策略。
