Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States.
ACS Nano. 2024 Aug 27;18(34):23785-23796. doi: 10.1021/acsnano.4c09055. Epub 2024 Aug 14.
In-sensor and near-sensor computing architectures enable multiply accumulate operations to be carried out directly at the point of sensing. In-sensor architectures offer dramatic power and speed improvements over traditional von Neumann architectures by eliminating multiple analog-to-digital conversions, data storage, and data movement operations. Current in-sensor processing approaches rely on tunable sensors or additional weighting elements to perform linear functions such as multiply accumulate operations as the sensor acquires data. This work implements in-sensor computing with an oscillatory retinal neuron device that converts incident optical signals into voltage oscillations. A computing scheme is introduced based on the frequency shift of coupled oscillators that enables parallel, frequency multiplexed, nonlinear operations on the inputs. An experimentally implemented 3 × 3 focal plane array of coupled neurons shows that functions approximating edge detection, thresholding, and segmentation occur . An example of inference on handwritten digits from the MNIST database is also experimentally demonstrated with a 3 × 3 array of coupled neurons feeding into a single hidden layer neural network, approximating a liquid-state machine. Finally, the equivalent energy consumption to carry out image processing operations, including peripherals such as the Fourier transform circuits, is projected to be <20 fJ/OP, possibly reaching as low as 15 aJ/OP.
在传感器内和传感器附近的计算架构可实现乘法累加操作,直接在感测点执行。与传统的冯·诺依曼架构相比,在传感器内架构通过消除多个模数转换、数据存储和数据移动操作,提供了显著的功率和速度改进。当前的在传感器内处理方法依赖于可调谐传感器或附加加权元件来执行线性函数,例如在传感器获取数据时执行乘法累加操作。这项工作使用将入射光信号转换为电压振荡的振荡视网膜神经元设备来实现在传感器内计算。引入了一种基于耦合振荡器的频率偏移的计算方案,该方案可实现对输入的并行、频率复用、非线性操作。实验实现的 3×3 个耦合神经元的焦平面阵列表明,边缘检测、阈值处理和分割等功能可以实现。还通过将 3×3 个耦合神经元馈送到单个隐藏层神经网络中,模拟液体状态机,实验证明了对手写数字的推理示例。最后,预计执行图像处理操作(包括傅里叶变换电路等外围设备)的等效能耗<20 fJ/OP,可能低至 15 aJ/OP。