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用于薄膜纳米图案化的金的无磨料化学机械平面化(CMP)

Abrasive-free chemical-mechanical planarization (CMP) of gold for thin film nano-patterning.

作者信息

Gherman Raphael, Beaudin Guillaume, Stricher Romain, Bryche Jean-François, Levesque Pierre, Fillion-Gourdeau François, MacLean Steve G, Drouin Dominique, Charette Paul G, Ecoffey Serge

机构信息

Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard de l'université, Sherbrooke, J1K 0A5 Québec, Canada.

Laboratoire Nanotechnologies Nanosystèmes (LN2)-IRL3463, CNRS, Université de Sherbrooke, Sherbrooke, J1K 0A5 Québec, Canada.

出版信息

Nanoscale. 2024 Sep 19;16(36):16861-16869. doi: 10.1039/d4nr02610a.

Abstract

Despite high demand for gold film nanostructuring, patterning gold at the nanoscale still presents considerable challenges for current foundry-compatible processes. Here, we present a method based on abrasive-free chemical mechanical planarization (CMP) to planarize nanostructured gold surfaces with high selectivity against SiO. The method is efficient in a damascene process and industry-compatible. Investigations into the material removal mechanism explore the effects of CMP parameters and show that the material removal rate is highly tunable with changes in slurry composition. Millimeter-scale arrays of gold nanostructures embedded in SiO were fabricated and the planarization dynamics were monitored over time, leading to the identification of distinct planarization phases and their correlation with the material removal mechanism. Finally, plasmonic cavities of gold nanostructure arrays over a gold mirror were fabricated. The cavities exhibited efficient plasmonic resonance in the visible range, aligning well with simulation results.

摘要

尽管对金膜纳米结构化有很高的需求,但在纳米尺度上对金进行图案化对于当前与代工厂兼容的工艺来说仍然面临相当大的挑战。在此,我们提出一种基于无磨料化学机械平面化(CMP)的方法,以对纳米结构化金表面进行平面化,对SiO具有高选择性。该方法在镶嵌工艺中效率高且与工业兼容。对材料去除机制的研究探讨了CMP参数的影响,并表明材料去除率可随着浆料成分的变化而高度可调。制备了嵌入SiO中的毫米级金纳米结构阵列,并随时间监测平面化动力学,从而确定了不同的平面化阶段及其与材料去除机制的相关性。最后,制备了金镜上的金纳米结构阵列的等离子体腔。这些腔在可见光范围内表现出高效的等离子体共振,与模拟结果吻合良好。

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