Effect of Average Grain Size on the Uniformity and Ferroelectricity of BTO/PSX Thin Films Processed by Low-Temperature Solution Method.

In this study, we utilized 50 nm BaTiO (BTO) nanoparticles and polysiloxane (PSX) with a higher concentration of methyl and silica groups to fabricate insulating layers at a low curing temperature of 100 °C using a solution-based method. This approach aims to enhance film uniformity while retaining the ferroelectric properties. Consequently, we maintained a minimal leakage current in thin-film transistors (TFTs) while achieving transfer characteristics characterized by a distinct hysteresis. Moreover, we verified the presence of ferroelectricity in 50 nm BTO nanoparticles. Compared with prior research, we confirm that decreasing nanoparticle size effectively reduces film roughness but also leads to a reduction in polarization intensity due to smaller diameter BTO nanoparticles. Additionally, a higher proportion of methyl and silica groups effectively lowers the curing temperature of PSX. At the same time, the hydrogen ions released in the polycondensation reaction can also effectively suppress the oxygen vacancies at the interface between dielectric and channel layers, improving the TFT electrical characteristics.