BaTiO3/PbZr0.52Ti0.48O3 铁电超晶格中电学性能的增强。

Enhancement of the Electrical Properties in BaTiO3/PbZr0.52Ti0.48O3 Ferroelectric Superlattices.

机构信息

Shenyang National Laboratory for Materials Science, Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS) , 72 Wenhua Road, Shenyang 110016, China.

出版信息

ACS Appl Mater Interfaces. 2016 Mar;8(10):6736-42. doi: 10.1021/acsami.5b12098. Epub 2016 Mar 3.

DOI:10.1021/acsami.5b12098

PMID:26913563

Abstract

In this study, BaTiO3/Pb(Zr0.52Ti0.48)O3 (BTO/PZT) ferroelectric superlattices have been grown on the Nb-doped SrTiO3 (NSTO) single-crystal substrate by pulsed laser deposition, and their electrical properties were investigated in detail. The leakage current was reduced significantly in the BTO/PZT superlattices, and the conduction mechanism could be interpreted as the bulk-limited mechanism. In addition, a more symmetric hysteresis loop was observed in the BTO/PZT superlattices compared with the pure PZT and BTO films. The BTO/PZT superlattices with the modulation thickness of 9.8 nm showed remarkably improved dielectric properties with dielectric constant and loss of 684 and 0.02, respectively, measured at the frequency of 10 kHz. Based on these experimental results, it can be considered that the BTO/PZT interfaces play a very important role for the enhanced electrical properties of the BTO/PZT superlattices.

摘要

在这项研究中，采用脉冲激光沉积法在 Nb 掺杂 SrTiO3（NSTO）单晶衬底上生长了 BaTiO3/Pb(Zr0.52Ti0.48)O3（BTO/PZT）铁电超晶格，并详细研究了它们的电学性能。BTO/PZT 超晶格中的漏电流显著降低，其传导机制可以解释为体限制机制。此外，与纯 PZT 和 BTO 薄膜相比，BTO/PZT 超晶格中观察到更对称的滞后环。调制厚度为 9.8nm 的 BTO/PZT 超晶格表现出显著改善的介电性能，在 10kHz 频率下测量的介电常数和损耗分别为 684 和 0.02。基于这些实验结果，可以认为 BTO/PZT 界面对于增强 BTO/PZT 超晶格的电学性能起着非常重要的作用。