State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, P R China.
ACS Appl Mater Interfaces. 2012 Apr;4(4):2199-203. doi: 10.1021/am300205t. Epub 2012 Apr 16.
Polymer-assisted deposition (PAD) technique was developed to fabricate ferroelectric BaTiO(3) (BTO) thin films directly on polycrystalline nickel foils. The growth dynamics was systematically studied to optimize the single-phase BTO films with good dielectric properties. It is critical to pretreat nickel foils with hydrogen peroxide (H(2)O(2)) solution to form thin nickel oxide layers on the surfaces for the growth of BTO films. Both the concentration of H(2)O(2) solution and the pretreated time were found to strongly affect the dielectric constant of BTO films, which may be associated with the oxygen diffusion from nickel oxide buffer layers to BTO layers during annealing. The BTO thin films with optimized growth conditions have good crystal structure and electrical properties, suggesting that the as-grown BTO films by PAD technique can be utilized for new devices development and energy storage applications.
高分子协助沉积(PAD)技术被开发用于在多晶镍箔上直接制备铁电钛酸钡(BTO)薄膜。系统地研究了生长动力学,以优化具有良好介电性能的单相 BTO 薄膜。用双氧水(H₂O₂)溶液预处理镍箔以在表面形成薄的氧化镍层对于 BTO 薄膜的生长是至关重要的。H₂O₂溶液的浓度和预处理时间都被发现强烈影响 BTO 薄膜的介电常数,这可能与退火过程中来自氧化镍缓冲层的氧向 BTO 层的扩散有关。在优化的生长条件下,BTO 薄膜具有良好的晶体结构和电学性能,这表明通过 PAD 技术生长的 BTO 薄膜可用于新型器件开发和储能应用。