Nitrogen-Doped Indium Oxide Electrochemical Sensor for Stable and Selective NO Detection.

Efficient gas sensors are critical for environmental monitoring and industrial safety. While metal oxide semiconductor (MOS) sensors are cost-effective, they struggle with poor selectivity, high operating temperatures, and limited stability. Electrochemical sensors, though selective and energy-efficient, face high costs, and stability issues due to precious metal catalysts like platinum on carbon (Pt/C). Herein, a novel, cost-effective electrochemical sensor using nitrogen-doped indium oxide InO N V (0.01≤x≤0.14), synthesized with varying nitriding times is presented. The optimized InO N-40 min sensor demonstrates a remarkable response current of 771 nA to 10 ppm nitrogen dioxide (NO) at ambient temperature, with outstanding long-term stability (over 30 days) and rapid response/recovery times (5/16 s). Compared to Pt/C sensors, it shows 84% and 67% reductions in response and recovery times, respectively, and maintains 98% performance after a month, versus 68% for Pt/C. This cost-effective sensor presents a promising alternative for electrochemical gas sensing, eliminating the need for precious metal catalysts.